Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon

R. A. Soref, F. Namavar, J. P. Lorenzo

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm-thick, single-crystal layer of Ge0.1Si0.9 grown by chemical-vapor deposition upon an intrinsic (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was 1.9 dB/cm.

Original languageEnglish (US)
Pages (from-to)270-272
Number of pages3
JournalOptics Letters
Volume15
Issue number5
DOIs
StatePublished - Mar 1 1990

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germanium
propagation modes
single crystals
silicon
vapor deposition

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon. / Soref, R. A.; Namavar, F.; Lorenzo, J. P.

In: Optics Letters, Vol. 15, No. 5, 01.03.1990, p. 270-272.

Research output: Contribution to journalArticle

Soref, R. A. ; Namavar, F. ; Lorenzo, J. P. / Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon. In: Optics Letters. 1990 ; Vol. 15, No. 5. pp. 270-272.
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