Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

V. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

We report on a study of the optical properties of undoped AlN/GaN superlattices by means of spectroscopic ellipsometry and photo- and cathodoluminescence. The effect of well and barrier thicknesses on the superlattice transition energies has been studied. Model calculations of the SL miniband structure are performed to compare theoretical predictions with the experimentally determined values of the transition energies.

Original languageEnglish (US)
Pages (from-to)2614-2617
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
StatePublished - Dec 1 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Darakchieva, V., Paskov, P. P., Schubert, M., Paskova, T., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., & Akasaki, I. (2003). Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy. Physica Status Solidi C: Conferences, (7), 2614-2617. https://doi.org/10.1002/pssc.200303408