Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperatures

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, W. D. Song, D. Y. Dai

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Abstract

The study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).

Original languageEnglish (US)
Pages (from-to)3180-3186
Number of pages7
JournalJournal of Applied Physics
Volume96
Issue number6
DOIs
StatePublished - Sep 15 2004

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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