Optical properties of GaAs1-y Ny (y le; 0.037)

G. Leibiger, B. Rheinländer, V. Gottschalch, M. Schubert, J. Šik, G. Lippold

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical properties of MOVPE GaAs1-yNy (0 ≤y ≤ 3.7%) single layers and GaAsN/GaAs superlattices are studied using spectroscopic ellipsometry and Raman spectroscopy. We analyse the dielectric function near the critical points E0, E1 and E11 using Adachi's critical-point model. For the layers and the GaAsN superlattice sublayers we observe the strong reduction of the band gap. Contrary to the red shift of the gap energy E0, the E1 and E11 energies are linearly blue shifted with increasing y. For 0 ≤y ≤1.65% the observed blueshift of the E1 energy is well explained by the combination of the effects of biaxial (001) strain and alloying. In the Raman spectra the redshift and broadening of the GaAs LO1 mode and the existence of the nitrogen local mode LO2 near 470 cm-1 have been detected.

Original languageEnglish (US)
Title of host publicationASDAM 2000 - Conference Proceedings
Subtitle of host publication3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
EditorsJan Kuzmik, Jozef Osvald, Stefan Hascik, Juraj Breza
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages171-174
Number of pages4
ISBN (Electronic)0780359399, 9780780359390
DOIs
StatePublished - Jan 1 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: Oct 16 2000Oct 18 2000

Publication series

NameASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Other

Other3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
CountrySlovakia
CitySmolenice
Period10/16/0010/18/00

Fingerprint

Energy gap
Optical properties
Metallorganic vapor phase epitaxy
Spectroscopic ellipsometry
Superlattices
Alloying
Raman spectroscopy
Raman scattering
Nitrogen

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Leibiger, G., Rheinländer, B., Gottschalch, V., Schubert, M., Šik, J., & Lippold, G. (2000). Optical properties of GaAs1-y Ny (y le; 0.037). In J. Kuzmik, J. Osvald, S. Hascik, & J. Breza (Eds.), ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 171-174). [889474] (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889473

Optical properties of GaAs1-y Ny (y le; 0.037). / Leibiger, G.; Rheinländer, B.; Gottschalch, V.; Schubert, M.; Šik, J.; Lippold, G.

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. ed. / Jan Kuzmik; Jozef Osvald; Stefan Hascik; Juraj Breza. Institute of Electrical and Electronics Engineers Inc., 2000. p. 171-174 889474 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Leibiger, G, Rheinländer, B, Gottschalch, V, Schubert, M, Šik, J & Lippold, G 2000, Optical properties of GaAs1-y Ny (y le; 0.037). in J Kuzmik, J Osvald, S Hascik & J Breza (eds), ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems., 889474, ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, Institute of Electrical and Electronics Engineers Inc., pp. 171-174, 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003, Smolenice, Slovakia, 10/16/00. https://doi.org/10.1109/ASDAM.2000.889473
Leibiger G, Rheinländer B, Gottschalch V, Schubert M, Šik J, Lippold G. Optical properties of GaAs1-y Ny (y le; 0.037). In Kuzmik J, Osvald J, Hascik S, Breza J, editors, ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2000. p. 171-174. 889474. (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems). https://doi.org/10.1109/ASDAM.2000.889473
Leibiger, G. ; Rheinländer, B. ; Gottschalch, V. ; Schubert, M. ; Šik, J. ; Lippold, G. / Optical properties of GaAs1-y Ny (y le; 0.037). ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. editor / Jan Kuzmik ; Jozef Osvald ; Stefan Hascik ; Juraj Breza. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 171-174 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems).
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