Optical properties of buried cobalt disilicide layers in silicon

F. Lu, C. H. Perry, F. Namavar

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Abstract

The optical reflectivity from highly conducting buried and exposed CoSi2 layers produced by Co ion implantation of Si substrates has been measured over the energy range 0.012-6.2 eV (0.2-100 μm). Both as-implanted and high temperature annealed heteroepitaxial layers were investigated. The frequency dependant optical constants associated with the CoSi2 films were derived from the multicomponent reflectivity spectra; the analysis accounted for the contributions from the Si-CoSi 2 interfaces. A Drude term was used to describe the free carriers, and a classical oscillator model was included to simulate interband electronic transitions for the CoSi2. The plasma frequency and relaxation time of the free carriers were measured as a function of anneal conditions. A direct correlation between the effective carrier concentration and the measured channeling data from Rutherford backscattering was observed.

Original languageEnglish (US)
Pages (from-to)7465-7469
Number of pages5
JournalJournal of Applied Physics
Volume75
Issue number11
DOIs
Publication statusPublished - Dec 1 1994

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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