Optical properties of buried cobalt disilicide layers in silicon

F. Lu, C. H. Perry, F. Namavar

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The optical reflectivity from highly conducting buried and exposed CoSi2 layers produced by Co ion implantation of Si substrates has been measured over the energy range 0.012-6.2 eV (0.2-100 μm). Both as-implanted and high temperature annealed heteroepitaxial layers were investigated. The frequency dependant optical constants associated with the CoSi2 films were derived from the multicomponent reflectivity spectra; the analysis accounted for the contributions from the Si-CoSi 2 interfaces. A Drude term was used to describe the free carriers, and a classical oscillator model was included to simulate interband electronic transitions for the CoSi2. The plasma frequency and relaxation time of the free carriers were measured as a function of anneal conditions. A direct correlation between the effective carrier concentration and the measured channeling data from Rutherford backscattering was observed.

Original languageEnglish (US)
Pages (from-to)7465-7469
Number of pages5
JournalJournal of Applied Physics
Volume75
Issue number11
DOIs
StatePublished - Dec 1 1994

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cobalt
optical properties
silicon
reflectance
plasma frequencies
ion implantation
backscattering
relaxation time
oscillators
conduction
electronics
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Optical properties of buried cobalt disilicide layers in silicon. / Lu, F.; Perry, C. H.; Namavar, F.

In: Journal of Applied Physics, Vol. 75, No. 11, 01.12.1994, p. 7465-7469.

Research output: Contribution to journalArticle

Lu, F. ; Perry, C. H. ; Namavar, F. / Optical properties of buried cobalt disilicide layers in silicon. In: Journal of Applied Physics. 1994 ; Vol. 75, No. 11. pp. 7465-7469.
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