Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry

A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, C. M. Herzinger

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Infrared Spectroscopic Ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E1 symmetry in hexagonal Al1-xInxN films for indium contents of 0.11 ≤ x ≤ 0.22. The 0.1 to 0.2 μm thick films were grown on thick slightly compressively strained α-GaN buffer layers, or directly on [0001] sapphire by metal organic vapor phase epitaxy. The Al1-xInxN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on [0001] sapphire possesses phonon modes which indicate fully relaxed film growth.

Original languageEnglish (US)
Pages513-518
Number of pages6
StatePublished - Dec 1 2000
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: Oct 2 2000Oct 5 2000

Other

Other27th International Symposium on Compound Semiconductors
CountryUnited States
CityMonterey, CA
Period10/2/0010/5/00

Fingerprint

Spectroscopic ellipsometry
Film growth
Sapphire
Optical properties
Thin films
Vapor phase epitaxy
Buffer layers
Thick films
Indium
Infrared radiation
Metals
Chemical analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kasic, A., Schubert, M., Rheinländer, B., Off, J., Scholz, F., & Herzinger, C. M. (2000). Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry. 513-518. Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.

Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry. / Kasic, A.; Schubert, M.; Rheinländer, B.; Off, J.; Scholz, F.; Herzinger, C. M.

2000. 513-518 Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.

Research output: Contribution to conferencePaper

Kasic, A, Schubert, M, Rheinländer, B, Off, J, Scholz, F & Herzinger, CM 2000, 'Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry', Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States, 10/2/00 - 10/5/00 pp. 513-518.
Kasic A, Schubert M, Rheinländer B, Off J, Scholz F, Herzinger CM. Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry. 2000. Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.
Kasic, A. ; Schubert, M. ; Rheinländer, B. ; Off, J. ; Scholz, F. ; Herzinger, C. M. / Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry. Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.6 p.
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