Optical Hall effect measurement of coupled phonon mode - Landau level transitions in epitaxial graphene on silicon carbide

P. Kühne, A. Boosalis, C. M. Herzinger, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, Mathias Schubert, T. Hofmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on mid-infrared (600 - 4000 cm-1), refection-type optical-Hall effect measurements on epitaxial graphene grown on C-face silicon carbide and present Landau-level transition features detected at 1.5 K as a function of magnetic field up to 8 Tesla. The Landau- level transitions are detected in reflection configuration at oblique incidence for wavenumbers below, across and above the silicon carbide reststrahlen range. Small Landau-level transition features are enhanced across the silicon carbide reststrahlen range due to surface-guided wave coupling with the electronic Landau-level transitions in the graphene layer. We analyze the spectral and magnetic-field dependencies of the coupled resonances, and compare our findings with previously reported Landau-level transitions measured in transmission configuration [4,5,6]. Additional features resemble transitions previously assigned to bilayer inclusion [21], as well as graphite [15]. We discuss a model description to account for the electromagnetic polarizability of the graphene layers, and which is sufficient for quantitative model calculation of the optical-Hall effect data.

Original languageEnglish (US)
Title of host publicationCarbon Nanomaterials
PublisherMaterials Research Society
Pages211-217
Number of pages7
ISBN (Print)9781632660985
DOIs
StatePublished - Jan 1 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1505
ISSN (Print)0272-9172

Conference

Conference2012 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/25/1211/30/12

Fingerprint

Graphite
Hall effect
Silicon carbide
silicon carbides
Graphene
graphene
Magnetic fields
Guided electromagnetic wave propagation
Surface waves
Infrared radiation
configurations
magnetic fields
silicon carbide
graphite
incidence
inclusions
electromagnetism
electronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kühne, P., Boosalis, A., Herzinger, C. M., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., ... Hofmann, T. (2013). Optical Hall effect measurement of coupled phonon mode - Landau level transitions in epitaxial graphene on silicon carbide. In Carbon Nanomaterials (pp. 211-217). (Materials Research Society Symposium Proceedings; Vol. 1505). Materials Research Society. https://doi.org/10.1557/opl.2013.811

Optical Hall effect measurement of coupled phonon mode - Landau level transitions in epitaxial graphene on silicon carbide. / Kühne, P.; Boosalis, A.; Herzinger, C. M.; Nyakiti, L. O.; Wheeler, V. D.; Myers-Ward, R. L.; Eddy, C. R.; Gaskill, D. K.; Schubert, Mathias; Hofmann, T.

Carbon Nanomaterials. Materials Research Society, 2013. p. 211-217 (Materials Research Society Symposium Proceedings; Vol. 1505).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kühne, P, Boosalis, A, Herzinger, CM, Nyakiti, LO, Wheeler, VD, Myers-Ward, RL, Eddy, CR, Gaskill, DK, Schubert, M & Hofmann, T 2013, Optical Hall effect measurement of coupled phonon mode - Landau level transitions in epitaxial graphene on silicon carbide. in Carbon Nanomaterials. Materials Research Society Symposium Proceedings, vol. 1505, Materials Research Society, pp. 211-217, 2012 MRS Fall Meeting, Boston, MA, United States, 11/25/12. https://doi.org/10.1557/opl.2013.811
Kühne P, Boosalis A, Herzinger CM, Nyakiti LO, Wheeler VD, Myers-Ward RL et al. Optical Hall effect measurement of coupled phonon mode - Landau level transitions in epitaxial graphene on silicon carbide. In Carbon Nanomaterials. Materials Research Society. 2013. p. 211-217. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2013.811
Kühne, P. ; Boosalis, A. ; Herzinger, C. M. ; Nyakiti, L. O. ; Wheeler, V. D. ; Myers-Ward, R. L. ; Eddy, C. R. ; Gaskill, D. K. ; Schubert, Mathias ; Hofmann, T. / Optical Hall effect measurement of coupled phonon mode - Landau level transitions in epitaxial graphene on silicon carbide. Carbon Nanomaterials. Materials Research Society, 2013. pp. 211-217 (Materials Research Society Symposium Proceedings).
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