Optical hall effect in hexagonal InN

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. J. Schaff, M. Schubert

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the -point effective mass.

Original languageEnglish (US)
Pages (from-to)611-615
Number of pages5
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
StatePublished - May 1 2008

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Keywords

  • Electron effective mass
  • Electronic properties
  • InN
  • Infrared and THz magneto-optic ellipsometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hofmann, T., Darakchieva, V., Monemar, B., Lu, H., Schaff, W. J., & Schubert, M. (2008). Optical hall effect in hexagonal InN. Journal of Electronic Materials, 37(5), 611-615. https://doi.org/10.1007/s11664-008-0385-8