Optical emission spectrum analyses during pulsed laser deflash of integrated circuit packages

Min Hui Hong, Yong Feng Lu, Qiong Chen

Research output: Contribution to journalArticle

7 Scopus citations


Optical emission spectrum analysis during Nd:YAG laser deflash of molding compound for integrated circuits (IC) packaging is investigated. Dependence of spectral line and band intensities for SiO molecules, Si excited atoms and ions on laser fluence is measured to study plasma species evolution. Threshold fluences for the spectral line and band appearance are also estimated. Temporally resolved optical emission spectrum analysis shows that the spectral lines and bands appear and recombine at different delay times after laser irradiation. Mechanism for spectral line generation and recombination is found to be attributed to strong collisions among plasma species.

Original languageEnglish (US)
Pages (from-to)6750-6753
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12 A
Publication statusPublished - Dec 1 1999



  • IC packages
  • Optical emission spectrum
  • Plasma analysis
  • Pulsed laser deflash

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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