Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry

Thomas E. Tiwald, Daniel W. Thompson, John A Woollam

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were measured and compared to spreading resistance probe data.

Original languageEnglish (US)
Pages (from-to)312-315
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number1
StatePublished - Jan 1 1998

Fingerprint

Ellipsometry
ellipsometry
Fourier transforms
Infrared radiation
Spectroscopic ellipsometry
profiles
Arsenic
Silicon wafers
Boron
Multilayers
Furnaces
Doping (additives)
Monitoring
arsenic
furnaces
boron
wafers
probes
silicon
Hot Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry. / Tiwald, Thomas E.; Thompson, Daniel W.; Woollam, John A.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 1, 01.01.1998, p. 312-315.

Research output: Contribution to journalArticle

@article{1fe4fa5e67a749cb858dc73458359efa,
title = "Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry",
abstract = "Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were measured and compared to spreading resistance probe data.",
author = "Tiwald, {Thomas E.} and Thompson, {Daniel W.} and Woollam, {John A}",
year = "1998",
month = "1",
day = "1",
language = "English (US)",
volume = "16",
pages = "312--315",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry

AU - Tiwald, Thomas E.

AU - Thompson, Daniel W.

AU - Woollam, John A

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were measured and compared to spreading resistance probe data.

AB - Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. The noncontact, nondestructive nature of the measurement suggests both ex situ and in situ monitoring and control applications. In this study, the carrier profiles were modeled as graded multilayers that can be constrained to a given functional form (Gaussian, erfc, etc.) when desired. Boron and arsenic implanted silicon wafers that were rapid thermal anneal and furnace annealed were measured and compared to spreading resistance probe data.

UR - http://www.scopus.com/inward/record.url?scp=0000303554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000303554&partnerID=8YFLogxK

M3 - Article

VL - 16

SP - 312

EP - 315

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 1

ER -