Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP

C. M. Herzinger, P. G. Snyder, F. G. Celii, Y. C. Kao, B. Johs, J. A. Woollam

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.

Original languageEnglish (US)
Pages (from-to)122-125
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - Jan 1 1994
EventProceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA
Duration: Mar 27 1994Mar 31 1994

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Reflection high energy electron diffraction
Thickness measurement
Optical constants
Retrofitting
Buffer layers
Data acquisition
Monitoring
Substrates
retrofitting
phytotrons
ellipsometers
data acquisition
buffers
incidence
probes
indium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP. / Herzinger, C. M.; Snyder, P. G.; Celii, F. G.; Kao, Y. C.; Johs, B.; Woollam, J. A.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 01.01.1994, p. 122-125.

Research output: Contribution to journalConference article

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