Optical and structural characteristics of virtually unstrained bulk-like GaN

Daniela Gogova, Alexander Kasic, Henrik Larsson, Bela Pécz, Rositza Yakimova, Björn Magnusson, Bo Monemar, Filip Tuomisto, Kimmo Saarinen, Claudio Miskys, Martin Stutzmann, Carsten Bundesmann, Mathias Schubert

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Bulk-like GaN with high structural and optical quality has been attained by hydride vapor-phase epitaxy (HVPE). The as-grown 330 μm-thick GaN layer was separated from the sapphire substrate by a laser-induced lift-off process. The full width at half maximum values of the X-ray diffraction (XRD) ω-scans of the free-standing material are 96 and 129 arcsec for the (10 -14) and (0002) reflection, respectively, which rank among the smallest values published so far for free-standing HVPE-GaN. The dislocation density determined by plan-view TEM images is 1-2 × 107 cm-2. Positron annihilation spectroscopy studies show that the concentration of Ga vacancy related defects is about 1.5 × 1016 cm-3. The high-resolution XRD, photoluminescence, μ-Raman, and infrared spectroscopic ellipsometry measurements consistently prove that the free-standing material is of high crystalline quality and virtually strain-free. Therefore it is suitable to serve as a substrate for stress-free growth of high-quality III-nitrides based device heterostructures.

Original languageEnglish (US)
Pages (from-to)1264-1268
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 A
DOIs
StatePublished - Jan 1 2004

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Vapor phase epitaxy
Hydrides
Positron annihilation spectroscopy
vapor phase epitaxy
X ray diffraction
hydrides
Spectroscopic ellipsometry
Substrates
Full width at half maximum
Sapphire
Nitrides
Vacancies
Heterojunctions
Photoluminescence
Crystalline materials
Transmission electron microscopy
Infrared radiation
positron annihilation
diffraction
Defects

Keywords

  • Bulk-like
  • GaN
  • HVPE
  • Optical and structural characteristics
  • Stress-free

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Optical and structural characteristics of virtually unstrained bulk-like GaN. / Gogova, Daniela; Kasic, Alexander; Larsson, Henrik; Pécz, Bela; Yakimova, Rositza; Magnusson, Björn; Monemar, Bo; Tuomisto, Filip; Saarinen, Kimmo; Miskys, Claudio; Stutzmann, Martin; Bundesmann, Carsten; Schubert, Mathias.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 A, 01.01.2004, p. 1264-1268.

Research output: Contribution to journalArticle

Gogova, D, Kasic, A, Larsson, H, Pécz, B, Yakimova, R, Magnusson, B, Monemar, B, Tuomisto, F, Saarinen, K, Miskys, C, Stutzmann, M, Bundesmann, C & Schubert, M 2004, 'Optical and structural characteristics of virtually unstrained bulk-like GaN', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 43, no. 4 A, pp. 1264-1268. https://doi.org/10.1143/JJAP.43.1264
Gogova, Daniela ; Kasic, Alexander ; Larsson, Henrik ; Pécz, Bela ; Yakimova, Rositza ; Magnusson, Björn ; Monemar, Bo ; Tuomisto, Filip ; Saarinen, Kimmo ; Miskys, Claudio ; Stutzmann, Martin ; Bundesmann, Carsten ; Schubert, Mathias. / Optical and structural characteristics of virtually unstrained bulk-like GaN. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 4 A. pp. 1264-1268.
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