Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition

T. Premkumar, Y. S. Zhou, Yongfeng Lu, K. Baskar

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

ZnO nanostructures were deposited on GaN (0001), Al2O 3 (0001), and Si (100) substrates using a high-pressure pulsed laser deposition (PLD) method. Vertically aligned hexagonal-pyramidal ZnO nanorods were obtained on the Al2O3 and Si substrates whereas interlinked ZnO nanowalls were obtained on the GaN substrates. A growth mechanism has been proposed for the formation of ZnO nanowalls based on different growth rates of ZnO polar and nonpolar planes. Both ZnO nanorods and nanowalls exhibit a strong E2H vibration mode in the micro-Raman spectra. The corresponding fluorescence spectra of ZnO nanorods and nanowalls showed near band emission at 3.28 eV. The ZnO nanorods grown on the Si substrates exhibited better crystalline and optical properties compared with the ZnO structures grown on the GaN and Al2O3 substrates. The high aspect ratio, good vertical alignment, and better crystallinity of the ZnO nanorods with tapered tips exhibited promising field emission performance with a low turn-on field of 2 V/μm, a high current density of 7.7 mA/cm 2, and a large field enhancement factor.

Original languageEnglish (US)
Pages (from-to)2863-2869
Number of pages7
JournalACS Applied Materials and Interfaces
Volume2
Issue number10
DOIs
StatePublished - Oct 27 2010

Fingerprint

Pulsed laser deposition
Nanorods
Field emission
Nanostructures
Substrates
Raman scattering
Aspect ratio
Current density
Optical properties
Fluorescence
Crystalline materials

Keywords

  • high-pressure pulsed laser deposition
  • nanorod field-emission properties
  • nanowalls
  • optical properties
  • zinc oxide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition. / Premkumar, T.; Zhou, Y. S.; Lu, Yongfeng; Baskar, K.

In: ACS Applied Materials and Interfaces, Vol. 2, No. 10, 27.10.2010, p. 2863-2869.

Research output: Contribution to journalArticle

@article{82469b173b594e3798cddb86aaaf4072,
title = "Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition",
abstract = "ZnO nanostructures were deposited on GaN (0001), Al2O 3 (0001), and Si (100) substrates using a high-pressure pulsed laser deposition (PLD) method. Vertically aligned hexagonal-pyramidal ZnO nanorods were obtained on the Al2O3 and Si substrates whereas interlinked ZnO nanowalls were obtained on the GaN substrates. A growth mechanism has been proposed for the formation of ZnO nanowalls based on different growth rates of ZnO polar and nonpolar planes. Both ZnO nanorods and nanowalls exhibit a strong E2H vibration mode in the micro-Raman spectra. The corresponding fluorescence spectra of ZnO nanorods and nanowalls showed near band emission at 3.28 eV. The ZnO nanorods grown on the Si substrates exhibited better crystalline and optical properties compared with the ZnO structures grown on the GaN and Al2O3 substrates. The high aspect ratio, good vertical alignment, and better crystallinity of the ZnO nanorods with tapered tips exhibited promising field emission performance with a low turn-on field of 2 V/μm, a high current density of 7.7 mA/cm 2, and a large field enhancement factor.",
keywords = "high-pressure pulsed laser deposition, nanorod field-emission properties, nanowalls, optical properties, zinc oxide",
author = "T. Premkumar and Zhou, {Y. S.} and Yongfeng Lu and K. Baskar",
year = "2010",
month = "10",
day = "27",
doi = "10.1021/am100539q",
language = "English (US)",
volume = "2",
pages = "2863--2869",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "10",

}

TY - JOUR

T1 - Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition

AU - Premkumar, T.

AU - Zhou, Y. S.

AU - Lu, Yongfeng

AU - Baskar, K.

PY - 2010/10/27

Y1 - 2010/10/27

N2 - ZnO nanostructures were deposited on GaN (0001), Al2O 3 (0001), and Si (100) substrates using a high-pressure pulsed laser deposition (PLD) method. Vertically aligned hexagonal-pyramidal ZnO nanorods were obtained on the Al2O3 and Si substrates whereas interlinked ZnO nanowalls were obtained on the GaN substrates. A growth mechanism has been proposed for the formation of ZnO nanowalls based on different growth rates of ZnO polar and nonpolar planes. Both ZnO nanorods and nanowalls exhibit a strong E2H vibration mode in the micro-Raman spectra. The corresponding fluorescence spectra of ZnO nanorods and nanowalls showed near band emission at 3.28 eV. The ZnO nanorods grown on the Si substrates exhibited better crystalline and optical properties compared with the ZnO structures grown on the GaN and Al2O3 substrates. The high aspect ratio, good vertical alignment, and better crystallinity of the ZnO nanorods with tapered tips exhibited promising field emission performance with a low turn-on field of 2 V/μm, a high current density of 7.7 mA/cm 2, and a large field enhancement factor.

AB - ZnO nanostructures were deposited on GaN (0001), Al2O 3 (0001), and Si (100) substrates using a high-pressure pulsed laser deposition (PLD) method. Vertically aligned hexagonal-pyramidal ZnO nanorods were obtained on the Al2O3 and Si substrates whereas interlinked ZnO nanowalls were obtained on the GaN substrates. A growth mechanism has been proposed for the formation of ZnO nanowalls based on different growth rates of ZnO polar and nonpolar planes. Both ZnO nanorods and nanowalls exhibit a strong E2H vibration mode in the micro-Raman spectra. The corresponding fluorescence spectra of ZnO nanorods and nanowalls showed near band emission at 3.28 eV. The ZnO nanorods grown on the Si substrates exhibited better crystalline and optical properties compared with the ZnO structures grown on the GaN and Al2O3 substrates. The high aspect ratio, good vertical alignment, and better crystallinity of the ZnO nanorods with tapered tips exhibited promising field emission performance with a low turn-on field of 2 V/μm, a high current density of 7.7 mA/cm 2, and a large field enhancement factor.

KW - high-pressure pulsed laser deposition

KW - nanorod field-emission properties

KW - nanowalls

KW - optical properties

KW - zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=79151471099&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79151471099&partnerID=8YFLogxK

U2 - 10.1021/am100539q

DO - 10.1021/am100539q

M3 - Article

VL - 2

SP - 2863

EP - 2869

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 10

ER -