Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique

R. J. Soukup, N. J. Ianno, Scott A. Darveau, Christopher L. Exstrom

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Using a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm-3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AMI solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

Original languageEnglish (US)
Pages (from-to)365-370
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume808
StatePublished - Dec 1 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

Fingerprint

hollow cathodes
Cathodes
Silicon
Thin films
thin films
electronics
Germanium
conductivity
Plasma jets
Spectroscopic ellipsometry
Reactive sputtering
silicon
Secondary ion mass spectrometry
plasma jets
secondary ion mass spectrometry
nozzles
ellipsometry
Hydrogen
Infrared spectroscopy
germanium

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique",
abstract = "Using a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm-3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10{\%}. Conductivity measurements in the dark and under simulated AMI solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.",
author = "Soukup, {R. J.} and Ianno, {N. J.} and Darveau, {Scott A.} and Exstrom, {Christopher L.}",
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T1 - Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique

AU - Soukup, R. J.

AU - Ianno, N. J.

AU - Darveau, Scott A.

AU - Exstrom, Christopher L.

PY - 2004/12/1

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