On the formation of ultrathin SIMOX structures by low energy implantation

F. Namavar, B. Buchanan, N. M. Kalkhoran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) wafers made by standard energy (150-200 ke V) Separation by IMplantation of Oxygen (SIMOX) process have shown great promise for meeting the needs of radiation-hard microelectronics. However, if SIMOX material is to become a competitive substrate material for manufacturing commercial integrated circuits, the cost of the SIMOX wafers must be greatly reduced. The low energy SIMOX (LES) process accomplishes the needed reduction in cost by producing ultrathin layers which require much lower in doses. These ultrathin layers are necessary for the next generation of commercial ultra high density CMOS integrated circuits, and must be of very high quality to be utilized for commercial applications. In this paper we discuss characterization of ultrathin LES structures.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJerzy Kanicki, William L. Warren, Roderick A.B. Devine, Masakiyo Matsumura
PublisherPubl by Materials Research Society
Pages567-572
Number of pages6
ISBN (Print)1558991794
StatePublished - Dec 1 1993
EventProceedings of a Symposium on Amorphous Insulating Thin Films - Boston, MA, USA
Duration: Dec 1 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume284
ISSN (Print)0272-9172

Other

OtherProceedings of a Symposium on Amorphous Insulating Thin Films
CityBoston, MA, USA
Period12/1/9212/4/92

Fingerprint

Oxygen
CMOS integrated circuits
Silicon
Microelectronics
Integrated circuits
Costs
Radiation
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Namavar, F., Buchanan, B., & Kalkhoran, N. M. (1993). On the formation of ultrathin SIMOX structures by low energy implantation. In J. Kanicki, W. L. Warren, R. A. B. Devine, & M. Matsumura (Eds.), Materials Research Society Symposium Proceedings (pp. 567-572). (Materials Research Society Symposium Proceedings; Vol. 284). Publ by Materials Research Society.

On the formation of ultrathin SIMOX structures by low energy implantation. / Namavar, F.; Buchanan, B.; Kalkhoran, N. M.

Materials Research Society Symposium Proceedings. ed. / Jerzy Kanicki; William L. Warren; Roderick A.B. Devine; Masakiyo Matsumura. Publ by Materials Research Society, 1993. p. 567-572 (Materials Research Society Symposium Proceedings; Vol. 284).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Namavar, F, Buchanan, B & Kalkhoran, NM 1993, On the formation of ultrathin SIMOX structures by low energy implantation. in J Kanicki, WL Warren, RAB Devine & M Matsumura (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 284, Publ by Materials Research Society, pp. 567-572, Proceedings of a Symposium on Amorphous Insulating Thin Films, Boston, MA, USA, 12/1/92.
Namavar F, Buchanan B, Kalkhoran NM. On the formation of ultrathin SIMOX structures by low energy implantation. In Kanicki J, Warren WL, Devine RAB, Matsumura M, editors, Materials Research Society Symposium Proceedings. Publ by Materials Research Society. 1993. p. 567-572. (Materials Research Society Symposium Proceedings).
Namavar, F. ; Buchanan, B. ; Kalkhoran, N. M. / On the formation of ultrathin SIMOX structures by low energy implantation. Materials Research Society Symposium Proceedings. editor / Jerzy Kanicki ; William L. Warren ; Roderick A.B. Devine ; Masakiyo Matsumura. Publ by Materials Research Society, 1993. pp. 567-572 (Materials Research Society Symposium Proceedings).
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