ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION.

F. Namavar, J. I. Budnick, F. H. Sanchez, H. C. Hayden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Oxygen O** plus ions have been implanted into Si both at room temperature and liquid nitrogen temperature in order to determine the effect of implantation temperature on SiO//2 formation. Samples were analysed by RBS with 1. 5 MeV He** plus ions. The implants of O** plus in Si were done at 150 keV with current densities of less than equivalent to 10 mu A/cm**2 . For doses of more than 1. 5 multiplied by 10**1**8 O** plus /cm**2, in-situ RBS experiments positively indicate a 2:1 oxygen silicon ratio. Increased O** plus doses (for both room temperature and liquid nitrogen temperature) cause the SiO//2 layers to spread uniformly and symmetrically toward both the surface and the interior. From these results, it is apparent that excess oxygen diffuses toward Si/SiO//2 interfaces in our experimental situation even at liquid nitrogen temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsB.R. Appleton, F.H. Eisen, T.W. Sigmon
PublisherMaterials Research Soc
Pages317-321
Number of pages5
ISBN (Print)0931837103
StatePublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume45
ISSN (Print)0272-9172

Fingerprint

Liquid nitrogen
Oxygen
Temperature
Ions
Silicon
Current density
Experiments

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Namavar, F., Budnick, J. I., Sanchez, F. H., & Hayden, H. C. (1985). ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION. In B. R. Appleton, F. H. Eisen, & T. W. Sigmon (Eds.), Materials Research Society Symposia Proceedings (pp. 317-321). (Materials Research Society Symposia Proceedings; Vol. 45). Materials Research Soc.

ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION. / Namavar, F.; Budnick, J. I.; Sanchez, F. H.; Hayden, H. C.

Materials Research Society Symposia Proceedings. ed. / B.R. Appleton; F.H. Eisen; T.W. Sigmon. Materials Research Soc, 1985. p. 317-321 (Materials Research Society Symposia Proceedings; Vol. 45).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Namavar, F, Budnick, JI, Sanchez, FH & Hayden, HC 1985, ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION. in BR Appleton, FH Eisen & TW Sigmon (eds), Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 45, Materials Research Soc, pp. 317-321.
Namavar F, Budnick JI, Sanchez FH, Hayden HC. ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION. In Appleton BR, Eisen FH, Sigmon TW, editors, Materials Research Society Symposia Proceedings. Materials Research Soc. 1985. p. 317-321. (Materials Research Society Symposia Proceedings).
Namavar, F. ; Budnick, J. I. ; Sanchez, F. H. ; Hayden, H. C. / ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION. Materials Research Society Symposia Proceedings. editor / B.R. Appleton ; F.H. Eisen ; T.W. Sigmon. Materials Research Soc, 1985. pp. 317-321 (Materials Research Society Symposia Proceedings).
@inproceedings{6be05969d143447b9abdef1355ea14b2,
title = "ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION.",
abstract = "Oxygen O** plus ions have been implanted into Si both at room temperature and liquid nitrogen temperature in order to determine the effect of implantation temperature on SiO//2 formation. Samples were analysed by RBS with 1. 5 MeV He** plus ions. The implants of O** plus in Si were done at 150 keV with current densities of less than equivalent to 10 mu A/cm**2 . For doses of more than 1. 5 multiplied by 10**1**8 O** plus /cm**2, in-situ RBS experiments positively indicate a 2:1 oxygen silicon ratio. Increased O** plus doses (for both room temperature and liquid nitrogen temperature) cause the SiO//2 layers to spread uniformly and symmetrically toward both the surface and the interior. From these results, it is apparent that excess oxygen diffuses toward Si/SiO//2 interfaces in our experimental situation even at liquid nitrogen temperature.",
author = "F. Namavar and Budnick, {J. I.} and Sanchez, {F. H.} and Hayden, {H. C.}",
year = "1985",
month = "12",
day = "1",
language = "English (US)",
isbn = "0931837103",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "317--321",
editor = "B.R. Appleton and F.H. Eisen and T.W. Sigmon",
booktitle = "Materials Research Society Symposia Proceedings",

}

TY - GEN

T1 - ON THE FORMATION OF Si OXIDE BY ION IMPLANTATION.

AU - Namavar, F.

AU - Budnick, J. I.

AU - Sanchez, F. H.

AU - Hayden, H. C.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Oxygen O** plus ions have been implanted into Si both at room temperature and liquid nitrogen temperature in order to determine the effect of implantation temperature on SiO//2 formation. Samples were analysed by RBS with 1. 5 MeV He** plus ions. The implants of O** plus in Si were done at 150 keV with current densities of less than equivalent to 10 mu A/cm**2 . For doses of more than 1. 5 multiplied by 10**1**8 O** plus /cm**2, in-situ RBS experiments positively indicate a 2:1 oxygen silicon ratio. Increased O** plus doses (for both room temperature and liquid nitrogen temperature) cause the SiO//2 layers to spread uniformly and symmetrically toward both the surface and the interior. From these results, it is apparent that excess oxygen diffuses toward Si/SiO//2 interfaces in our experimental situation even at liquid nitrogen temperature.

AB - Oxygen O** plus ions have been implanted into Si both at room temperature and liquid nitrogen temperature in order to determine the effect of implantation temperature on SiO//2 formation. Samples were analysed by RBS with 1. 5 MeV He** plus ions. The implants of O** plus in Si were done at 150 keV with current densities of less than equivalent to 10 mu A/cm**2 . For doses of more than 1. 5 multiplied by 10**1**8 O** plus /cm**2, in-situ RBS experiments positively indicate a 2:1 oxygen silicon ratio. Increased O** plus doses (for both room temperature and liquid nitrogen temperature) cause the SiO//2 layers to spread uniformly and symmetrically toward both the surface and the interior. From these results, it is apparent that excess oxygen diffuses toward Si/SiO//2 interfaces in our experimental situation even at liquid nitrogen temperature.

UR - http://www.scopus.com/inward/record.url?scp=0022240774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022240774&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022240774

SN - 0931837103

T3 - Materials Research Society Symposia Proceedings

SP - 317

EP - 321

BT - Materials Research Society Symposia Proceedings

A2 - Appleton, B.R.

A2 - Eisen, F.H.

A2 - Sigmon, T.W.

PB - Materials Research Soc

ER -