Numerical prediction of the etched profile in pyrolytic laser etching of silicon and gallium arsenide

Teng Soon Wee, Yongfeng Lu, Wai Kin Chim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A quasi-static two-dimensional heat conduction analysis is used to deduce the geometrical profile of a cavity pyrolytically etched on isotropic silicon and GaAs substrates by a stationary CW argon ion laser with a Gaussian intensity profile. The nonlinear problem is solved using the numerical finite element method. Starting with a substrate having a flat surface, the numerical routine progressively removes regions of the substrate to model the actual etching action. Multiple reflections of the laser beam in the etched cavity are also modeled assuming that the substrate surface is perfectly diffused. Laser etching experiments performed on a silicon substrate in a CCl4 gas ambient are used to verify the numerical routine. Comparison between the experimental and the numerical results indicates that the desorption of SiCl2 radicals is probably responsible for the final etched profile obtained. Numerical results are also compared with the experimental data obtained from previous works carried out on a GaAs substrate.

Original languageEnglish (US)
Pages (from-to)5116-5124
Number of pages9
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number8
StatePublished - Aug 1 1997

Fingerprint

Gallium arsenide
gallium
Etching
etching
Silicon
Lasers
silicon
Substrates
profiles
predictions
lasers
cavities
Heat conduction
conductive heat transfer
Laser beams
Argon
flat surfaces
Desorption
finite element method
desorption

Keywords

  • Carbon tetrachloride
  • Diffused reflection
  • Gallium arsenide
  • Heat conduction analysis
  • Laser etched profile
  • Laser induced temperature profile
  • Numerical laser etching model
  • Pyrolytic laser etching
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "A quasi-static two-dimensional heat conduction analysis is used to deduce the geometrical profile of a cavity pyrolytically etched on isotropic silicon and GaAs substrates by a stationary CW argon ion laser with a Gaussian intensity profile. The nonlinear problem is solved using the numerical finite element method. Starting with a substrate having a flat surface, the numerical routine progressively removes regions of the substrate to model the actual etching action. Multiple reflections of the laser beam in the etched cavity are also modeled assuming that the substrate surface is perfectly diffused. Laser etching experiments performed on a silicon substrate in a CCl4 gas ambient are used to verify the numerical routine. Comparison between the experimental and the numerical results indicates that the desorption of SiCl2 radicals is probably responsible for the final etched profile obtained. Numerical results are also compared with the experimental data obtained from previous works carried out on a GaAs substrate.",
keywords = "Carbon tetrachloride, Diffused reflection, Gallium arsenide, Heat conduction analysis, Laser etched profile, Laser induced temperature profile, Numerical laser etching model, Pyrolytic laser etching, Silicon",
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year = "1997",
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AU - Wee, Teng Soon

AU - Lu, Yongfeng

AU - Chim, Wai Kin

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Y1 - 1997/8/1

N2 - A quasi-static two-dimensional heat conduction analysis is used to deduce the geometrical profile of a cavity pyrolytically etched on isotropic silicon and GaAs substrates by a stationary CW argon ion laser with a Gaussian intensity profile. The nonlinear problem is solved using the numerical finite element method. Starting with a substrate having a flat surface, the numerical routine progressively removes regions of the substrate to model the actual etching action. Multiple reflections of the laser beam in the etched cavity are also modeled assuming that the substrate surface is perfectly diffused. Laser etching experiments performed on a silicon substrate in a CCl4 gas ambient are used to verify the numerical routine. Comparison between the experimental and the numerical results indicates that the desorption of SiCl2 radicals is probably responsible for the final etched profile obtained. Numerical results are also compared with the experimental data obtained from previous works carried out on a GaAs substrate.

AB - A quasi-static two-dimensional heat conduction analysis is used to deduce the geometrical profile of a cavity pyrolytically etched on isotropic silicon and GaAs substrates by a stationary CW argon ion laser with a Gaussian intensity profile. The nonlinear problem is solved using the numerical finite element method. Starting with a substrate having a flat surface, the numerical routine progressively removes regions of the substrate to model the actual etching action. Multiple reflections of the laser beam in the etched cavity are also modeled assuming that the substrate surface is perfectly diffused. Laser etching experiments performed on a silicon substrate in a CCl4 gas ambient are used to verify the numerical routine. Comparison between the experimental and the numerical results indicates that the desorption of SiCl2 radicals is probably responsible for the final etched profile obtained. Numerical results are also compared with the experimental data obtained from previous works carried out on a GaAs substrate.

KW - Carbon tetrachloride

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