Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis

W. M. Paulson, R. I. Hegde, B. B. Doris, V. Kaushik, P. J. Tobin, J. Fitch, W. A. McGahan, J. A. Woollam

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopic ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7 nm with increasing deposition times and then rapidly decreases to 0.5 nm for longer times. Ellipsometry data was modeled using two layers where the top layer consists of a mixture of amorphous Si plus voids and the bottom layer is a continuous amorphous Si layer. Cross-section TEM reveals the nuclei size and structure for these silicon films and confirms the results of the other techniques.

Original languageEnglish (US)
Pages (from-to)77-82
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume355
StatePublished - Jan 1 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

Fingerprint

Silicon
Chemical vapor deposition
Nucleation
vapor deposition
atomic force microscopy
nucleation
Transmission electron microscopy
Thin films
transmission electron microscopy
Spectroscopic ellipsometry
Ellipsometry
thin films
silicon films
ellipsometry
Atomic force microscopy
Surface roughness
voids
surface roughness
nuclei
cross sections

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Paulson, W. M., Hegde, R. I., Doris, B. B., Kaushik, V., Tobin, P. J., Fitch, J., ... Woollam, J. A. (1995). Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis. Materials Research Society Symposium - Proceedings, 355, 77-82.

Nucleation and growth of CVD Si thin films : AFM, SE and TEM analysis. / Paulson, W. M.; Hegde, R. I.; Doris, B. B.; Kaushik, V.; Tobin, P. J.; Fitch, J.; McGahan, W. A.; Woollam, J. A.

In: Materials Research Society Symposium - Proceedings, Vol. 355, 01.01.1995, p. 77-82.

Research output: Contribution to journalConference article

Paulson, WM, Hegde, RI, Doris, BB, Kaushik, V, Tobin, PJ, Fitch, J, McGahan, WA & Woollam, JA 1995, 'Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis', Materials Research Society Symposium - Proceedings, vol. 355, pp. 77-82.
Paulson WM, Hegde RI, Doris BB, Kaushik V, Tobin PJ, Fitch J et al. Nucleation and growth of CVD Si thin films: AFM, SE and TEM analysis. Materials Research Society Symposium - Proceedings. 1995 Jan 1;355:77-82.
Paulson, W. M. ; Hegde, R. I. ; Doris, B. B. ; Kaushik, V. ; Tobin, P. J. ; Fitch, J. ; McGahan, W. A. ; Woollam, J. A. / Nucleation and growth of CVD Si thin films : AFM, SE and TEM analysis. In: Materials Research Society Symposium - Proceedings. 1995 ; Vol. 355. pp. 77-82.
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