Novel silicon-on-insulator structures for silicon waveguides

E. Cortesi, F. Namavar, R. A. Soref

Research output: Contribution to conferencePaper

10 Citations (Scopus)

Abstract

Summary form only given. The authors discuss optical waveguiding at a wavelength of 1.3 microns in a separation by implantation of oxygen (SIMOX) sample with a silicon top layer about two microns thick on a buried SiO2 layer about 4000 angstrom thick. The sample was formed using the standard SIMOX process with subsequent growth of epitaxial Si by chemical vapor deposition (CVD). The waveguide length was 1.1 cm. Very thin, very thick, and double-layer buried oxide structures have also been obtained with a multiple implantation process and growth of epitaxial Si by CVD. Optical waveguiding can be obtained in both silicon layers of a double-buried-layer SIMOX wafer (in Si level #1 and Si level #2). In addition, when the SiO2 layer between 1 and 2 has a thickness of one micron, the guided optical signals in 1 will be independent of those in 2 because the guides are not coupled. Alternatively, optical signals can be transferred from one level to another at certain locations. For example, if the thickness of the 1-2 SiO2 layer is reduced locally to 1000 angstrom, waveguide theory predicts that the waveguides in 1 will couple strongly to waveguides in 2 at that locations.

Original languageEnglish (US)
Number of pages1
StatePublished - Dec 1 1989
EventIEEE SOS/SOI Technology Conference 1989 - Stateline, NV, USA
Duration: Oct 3 1989Oct 5 1989

Other

OtherIEEE SOS/SOI Technology Conference 1989
CityStateline, NV, USA
Period10/3/8910/5/89

Fingerprint

Waveguides
Silicon
Oxygen
Chemical vapor deposition
Wavelength
Oxides

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cortesi, E., Namavar, F., & Soref, R. A. (1989). Novel silicon-on-insulator structures for silicon waveguides. Paper presented at IEEE SOS/SOI Technology Conference 1989, Stateline, NV, USA, .

Novel silicon-on-insulator structures for silicon waveguides. / Cortesi, E.; Namavar, F.; Soref, R. A.

1989. Paper presented at IEEE SOS/SOI Technology Conference 1989, Stateline, NV, USA, .

Research output: Contribution to conferencePaper

Cortesi, E, Namavar, F & Soref, RA 1989, 'Novel silicon-on-insulator structures for silicon waveguides', Paper presented at IEEE SOS/SOI Technology Conference 1989, Stateline, NV, USA, 10/3/89 - 10/5/89.
Cortesi E, Namavar F, Soref RA. Novel silicon-on-insulator structures for silicon waveguides. 1989. Paper presented at IEEE SOS/SOI Technology Conference 1989, Stateline, NV, USA, .
Cortesi, E. ; Namavar, F. ; Soref, R. A. / Novel silicon-on-insulator structures for silicon waveguides. Paper presented at IEEE SOS/SOI Technology Conference 1989, Stateline, NV, USA, .1 p.
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N2 - Summary form only given. The authors discuss optical waveguiding at a wavelength of 1.3 microns in a separation by implantation of oxygen (SIMOX) sample with a silicon top layer about two microns thick on a buried SiO2 layer about 4000 angstrom thick. The sample was formed using the standard SIMOX process with subsequent growth of epitaxial Si by chemical vapor deposition (CVD). The waveguide length was 1.1 cm. Very thin, very thick, and double-layer buried oxide structures have also been obtained with a multiple implantation process and growth of epitaxial Si by CVD. Optical waveguiding can be obtained in both silicon layers of a double-buried-layer SIMOX wafer (in Si level #1 and Si level #2). In addition, when the SiO2 layer between 1 and 2 has a thickness of one micron, the guided optical signals in 1 will be independent of those in 2 because the guides are not coupled. Alternatively, optical signals can be transferred from one level to another at certain locations. For example, if the thickness of the 1-2 SiO2 layer is reduced locally to 1000 angstrom, waveguide theory predicts that the waveguides in 1 will couple strongly to waveguides in 2 at that locations.

AB - Summary form only given. The authors discuss optical waveguiding at a wavelength of 1.3 microns in a separation by implantation of oxygen (SIMOX) sample with a silicon top layer about two microns thick on a buried SiO2 layer about 4000 angstrom thick. The sample was formed using the standard SIMOX process with subsequent growth of epitaxial Si by chemical vapor deposition (CVD). The waveguide length was 1.1 cm. Very thin, very thick, and double-layer buried oxide structures have also been obtained with a multiple implantation process and growth of epitaxial Si by CVD. Optical waveguiding can be obtained in both silicon layers of a double-buried-layer SIMOX wafer (in Si level #1 and Si level #2). In addition, when the SiO2 layer between 1 and 2 has a thickness of one micron, the guided optical signals in 1 will be independent of those in 2 because the guides are not coupled. Alternatively, optical signals can be transferred from one level to another at certain locations. For example, if the thickness of the 1-2 SiO2 layer is reduced locally to 1000 angstrom, waveguide theory predicts that the waveguides in 1 will couple strongly to waveguides in 2 at that locations.

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