Nonvolatile voltage controlled molecular spin state switching

G. Hao, A. Mosey, X. Jiang, A. J. Yost, K. R. Sapkota, G. T. Wang, X. Zhang, J. Zhang, A. T. N'Diaye, R. Cheng, X. Xu, P. A. Dowben

Research output: Contribution to journalArticle

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Abstract

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. The result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

Original languageEnglish (US)
Article number032901
JournalApplied Physics Letters
Volume114
Issue number3
DOIs
StatePublished - Jan 21 2019

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crossovers
electric potential
vinylidene
fluorides
acids
thin films
transistors
diodes
electric fields
room temperature
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hao, G., Mosey, A., Jiang, X., Yost, A. J., Sapkota, K. R., Wang, G. T., ... Dowben, P. A. (2019). Nonvolatile voltage controlled molecular spin state switching. Applied Physics Letters, 114(3), [032901]. https://doi.org/10.1063/1.5054909

Nonvolatile voltage controlled molecular spin state switching. / Hao, G.; Mosey, A.; Jiang, X.; Yost, A. J.; Sapkota, K. R.; Wang, G. T.; Zhang, X.; Zhang, J.; N'Diaye, A. T.; Cheng, R.; Xu, X.; Dowben, P. A.

In: Applied Physics Letters, Vol. 114, No. 3, 032901, 21.01.2019.

Research output: Contribution to journalArticle

Hao, G, Mosey, A, Jiang, X, Yost, AJ, Sapkota, KR, Wang, GT, Zhang, X, Zhang, J, N'Diaye, AT, Cheng, R, Xu, X & Dowben, PA 2019, 'Nonvolatile voltage controlled molecular spin state switching', Applied Physics Letters, vol. 114, no. 3, 032901. https://doi.org/10.1063/1.5054909
Hao G, Mosey A, Jiang X, Yost AJ, Sapkota KR, Wang GT et al. Nonvolatile voltage controlled molecular spin state switching. Applied Physics Letters. 2019 Jan 21;114(3). 032901. https://doi.org/10.1063/1.5054909
Hao, G. ; Mosey, A. ; Jiang, X. ; Yost, A. J. ; Sapkota, K. R. ; Wang, G. T. ; Zhang, X. ; Zhang, J. ; N'Diaye, A. T. ; Cheng, R. ; Xu, X. ; Dowben, P. A. / Nonvolatile voltage controlled molecular spin state switching. In: Applied Physics Letters. 2019 ; Vol. 114, No. 3.
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