Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film

Timothy J. Reece, Stephen Ducharme, A. V. Sorokin, Matt Poulsen

Research output: Contribution to journalArticle

136 Citations (Scopus)

Abstract

The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.

Original languageEnglish (US)
Pages (from-to)142-144
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number1
DOIs
StatePublished - Jan 6 2003

Fingerprint

Langmuir-Blodgett films
capacitance
polymers
threshold voltage
insulators
fabrication
shift
electric potential
polarization
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film. / Reece, Timothy J.; Ducharme, Stephen; Sorokin, A. V.; Poulsen, Matt.

In: Applied Physics Letters, Vol. 82, No. 1, 06.01.2003, p. 142-144.

Research output: Contribution to journalArticle

Reece, Timothy J. ; Ducharme, Stephen ; Sorokin, A. V. ; Poulsen, Matt. / Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film. In: Applied Physics Letters. 2003 ; Vol. 82, No. 1. pp. 142-144.
@article{00cc132c61464a278aa8f1fe9030fc5b,
title = "Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film",
abstract = "The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.",
author = "Reece, {Timothy J.} and Stephen Ducharme and Sorokin, {A. V.} and Matt Poulsen",
year = "2003",
month = "1",
day = "6",
doi = "10.1063/1.1533844",
language = "English (US)",
volume = "82",
pages = "142--144",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film

AU - Reece, Timothy J.

AU - Ducharme, Stephen

AU - Sorokin, A. V.

AU - Poulsen, Matt

PY - 2003/1/6

Y1 - 2003/1/6

N2 - The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.

AB - The operation and fabrication of a metal-ferroelectric-insulator-semiconductor (MFIS) memory element which incorporates a ferroelectric polymer Langmuir-Blodgett (LB) film were reported. The small-signal capacitance exhibits strong hystersis due to the bistable polarization state of the ferroelectric film. The device exhibits capacitance hystersis as the gate voltage was cycled between ±25 V with a threshold voltage shift of 2.8 V.

UR - http://www.scopus.com/inward/record.url?scp=0037421387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037421387&partnerID=8YFLogxK

U2 - 10.1063/1.1533844

DO - 10.1063/1.1533844

M3 - Article

AN - SCOPUS:0037421387

VL - 82

SP - 142

EP - 144

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -