Nitrogen dependence of the GaAsN interband critical points E1 and E11 determined by spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, B. Rheinländer, J. Šik, Mathias Schubert

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

The effects of the nitrogen concentrations on the E1 and E1 + Δ1 transitions of tensile-strained GaAs1-yNy (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1 + Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying.

Original languageEnglish (US)
Pages (from-to)1650-1652
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number11
DOIs
StatePublished - Sep 11 2000

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ellipsometry
critical point
nitrogen
vapor phase epitaxy
alloying
composite materials
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nitrogen dependence of the GaAsN interband critical points E1 and E11 determined by spectroscopic ellipsometry. / Leibiger, G.; Gottschalch, V.; Rheinländer, B.; Šik, J.; Schubert, Mathias.

In: Applied Physics Letters, Vol. 77, No. 11, 11.09.2000, p. 1650-1652.

Research output: Contribution to journalArticle

Leibiger, G. ; Gottschalch, V. ; Rheinländer, B. ; Šik, J. ; Schubert, Mathias. / Nitrogen dependence of the GaAsN interband critical points E1 and E11 determined by spectroscopic ellipsometry. In: Applied Physics Letters. 2000 ; Vol. 77, No. 11. pp. 1650-1652.
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