Nitrogen dependence of the GaAsN interband critical points E1 and E11 determined by spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, B. Rheinländer, J. Šik, M. Schubert

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Abstract

The effects of the nitrogen concentrations on the E1 and E1 + Δ1 transitions of tensile-strained GaAs1-yNy (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1 + Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying.

Original languageEnglish (US)
Pages (from-to)1650-1652
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number11
DOIs
StatePublished - Sep 11 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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