Nano-scale morphology and crystallography of laser-deposited TiN thin films

Hai Dan Wang, Yongfeng Lu, Zhi Hong Mai, Zhong Min Ren

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Titanium nitride (TIN) thin films were deposited on hydrogen-terminated silicon (100) substrates by pulsed laser ablation of a ceramic TiN target (purity: 99.9%). The crystallography and properties of the thin films are related to the substrate temperature. In the investigation, scanning tunneling microscopy (STM), X-ray diffraction (XRD) and nanoindentation were used. Nano-scale morphology of the thin films deposited at 600 °C was observed by STM using a platinum tip. The STM image showed that the TiN embryos have a uniform size of approximately 17 nm and grow into large clusters. The films grown at 600 °C have a full-width at half maximum of the TiN (200) peak in the XRD spectrum close to 0.50°. The hardness of the thin films deposited at 600 °C was as high as 26 GPa.

Original languageEnglish (US)
Pages (from-to)6268-6271
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number11
StatePublished - Nov 1 2000

Fingerprint

Crystallography
crystallography
Scanning tunneling microscopy
scanning tunneling microscopy
Thin films
Lasers
thin films
lasers
X ray diffraction
Titanium nitride
titanium nitrides
embryos
Laser ablation
Substrates
Nanoindentation
nanoindentation
Full width at half maximum
Pulsed lasers
diffraction
laser ablation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Nano-scale morphology and crystallography of laser-deposited TiN thin films. / Wang, Hai Dan; Lu, Yongfeng; Mai, Zhi Hong; Ren, Zhong Min.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 11, 01.11.2000, p. 6268-6271.

Research output: Contribution to journalArticle

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