MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy

C. Krahmer, M. Philippens, Mathias Schubert, K. Streubel

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

AlGaAs and InGaAlP are important materials for optoelectronic devices. We investigate the effect of p- and n-type doping on the reflectance anisotropy spectroscopy (RAS) spectra of these materials. Different n-dopants (Te, Si) were incorporated to investigate their contribution to the RAS signal at detected photon energies from 2.4 to 4.5 eV. Furthermore, the effect of ordering in GaInP layers on the RAS spectra was studied. Growth parameters such as substrate off-orientation, growth temperature and doping level were varied in order to attain different degrees of ordering in GaInP and study their influence on the RAS signals. These results are combined with capacitance-voltage (C-V) measurements and secondary ion mass spectroscopy (SIMS).

Original languageEnglish (US)
Pages (from-to)18-22
Number of pages5
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
StatePublished - Jan 1 2007

Fingerprint

Metallorganic vapor phase epitaxy
aluminum gallium arsenides
Anisotropy
Doping (additives)
Spectroscopy
reflectance
anisotropy
spectroscopy
optoelectronic devices
Capacitance measurement
electrical measurement
Voltage measurement
Growth temperature
mass spectroscopy
capacitance
Optoelectronic devices
Photons
Ions
photons
Substrates

Keywords

  • A1. Doping
  • A1. Ordering
  • A1. Reflectance anisotropy spectroscopy
  • A3. Metalorganic vapour phase epitaxy
  • B1. AlGaAs
  • B1. AlGaInP

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy. / Krahmer, C.; Philippens, M.; Schubert, Mathias; Streubel, K.

In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.01.2007, p. 18-22.

Research output: Contribution to journalArticle

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N2 - AlGaAs and InGaAlP are important materials for optoelectronic devices. We investigate the effect of p- and n-type doping on the reflectance anisotropy spectroscopy (RAS) spectra of these materials. Different n-dopants (Te, Si) were incorporated to investigate their contribution to the RAS signal at detected photon energies from 2.4 to 4.5 eV. Furthermore, the effect of ordering in GaInP layers on the RAS spectra was studied. Growth parameters such as substrate off-orientation, growth temperature and doping level were varied in order to attain different degrees of ordering in GaInP and study their influence on the RAS signals. These results are combined with capacitance-voltage (C-V) measurements and secondary ion mass spectroscopy (SIMS).

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KW - A1. Doping

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KW - B1. AlGaInP

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