Monolayer and bilayer polyaniline C3N

Two-dimensional semiconductors with high thermal conductivity

Yang Hong, Jingchao Zhang, Xiao C Zeng

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Polyaniline (PANI) has been extensively studied in the past few decades owing to its broad applications in electronic devices. However, two dimensional PANI was not realized until very recently. In this work, the thermal transport properties of one of the newly synthesized 2D PANI structures, C3N, are systematically investigated using classical molecular dynamics simulations. The in-plane thermal conductivity (κ) of monolayer and bilayer C3N structures is computed, and the κ values for infinite-length systems are found to be as high as 820 and 805 W m-1 K-1, respectively. Both the values are markedly higher than those of many prevailing 2D semiconducting materials such as phosphorene, hexagonal boron nitride, MoS2 and MoSe2. The effects of different modulators, such as system dimension, temperature, interlayer coupling strength and tensile strain, on the calculated thermal conductivity are evaluated. Monotonic decreasing trends of thermal conductivity with temperature and tensile strain are found, while a positive correlation between the thermal conductivity and system dimension is revealed. Interlayer coupling strength is found to have negligible effects on the in-plane thermal conductivity of bilayer C3N. The cross-plane interfacial thermal resistance (R) between two adjacent C3N layers is evaluated in the temperature range from 100 to 500 K and at different coupling strengths. The predicted R at temperature 300 K equals 3.4 × 10-8 K m-2 W-1. The maximum reductions of R can amount to 59% and 68% with respect to temperature and coupling strength, respectively. Our results provide theoretical guidance to future applications of C3N-based low-dimensional materials in electronic devices.

Original languageEnglish (US)
Pages (from-to)4301-4310
Number of pages10
JournalNanoscale
Volume10
Issue number9
DOIs
StatePublished - Jan 1 2018

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Polyaniline
Monolayers
Thermal conductivity
Semiconductor materials
Tensile strain
Temperature
Boron nitride
Heat resistance
Transport properties
Modulators
Molecular dynamics
polyaniline
Computer simulation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Monolayer and bilayer polyaniline C3N : Two-dimensional semiconductors with high thermal conductivity. / Hong, Yang; Zhang, Jingchao; Zeng, Xiao C.

In: Nanoscale, Vol. 10, No. 9, 01.01.2018, p. 4301-4310.

Research output: Contribution to journalArticle

@article{346882481abd42dc85522df1bb1da72e,
title = "Monolayer and bilayer polyaniline C3N: Two-dimensional semiconductors with high thermal conductivity",
abstract = "Polyaniline (PANI) has been extensively studied in the past few decades owing to its broad applications in electronic devices. However, two dimensional PANI was not realized until very recently. In this work, the thermal transport properties of one of the newly synthesized 2D PANI structures, C3N, are systematically investigated using classical molecular dynamics simulations. The in-plane thermal conductivity (κ) of monolayer and bilayer C3N structures is computed, and the κ values for infinite-length systems are found to be as high as 820 and 805 W m-1 K-1, respectively. Both the values are markedly higher than those of many prevailing 2D semiconducting materials such as phosphorene, hexagonal boron nitride, MoS2 and MoSe2. The effects of different modulators, such as system dimension, temperature, interlayer coupling strength and tensile strain, on the calculated thermal conductivity are evaluated. Monotonic decreasing trends of thermal conductivity with temperature and tensile strain are found, while a positive correlation between the thermal conductivity and system dimension is revealed. Interlayer coupling strength is found to have negligible effects on the in-plane thermal conductivity of bilayer C3N. The cross-plane interfacial thermal resistance (R) between two adjacent C3N layers is evaluated in the temperature range from 100 to 500 K and at different coupling strengths. The predicted R at temperature 300 K equals 3.4 × 10-8 K m-2 W-1. The maximum reductions of R can amount to 59{\%} and 68{\%} with respect to temperature and coupling strength, respectively. Our results provide theoretical guidance to future applications of C3N-based low-dimensional materials in electronic devices.",
author = "Yang Hong and Jingchao Zhang and Zeng, {Xiao C}",
year = "2018",
month = "1",
day = "1",
doi = "10.1039/c7nr08458g",
language = "English (US)",
volume = "10",
pages = "4301--4310",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "9",

}

TY - JOUR

T1 - Monolayer and bilayer polyaniline C3N

T2 - Two-dimensional semiconductors with high thermal conductivity

AU - Hong, Yang

AU - Zhang, Jingchao

AU - Zeng, Xiao C

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Polyaniline (PANI) has been extensively studied in the past few decades owing to its broad applications in electronic devices. However, two dimensional PANI was not realized until very recently. In this work, the thermal transport properties of one of the newly synthesized 2D PANI structures, C3N, are systematically investigated using classical molecular dynamics simulations. The in-plane thermal conductivity (κ) of monolayer and bilayer C3N structures is computed, and the κ values for infinite-length systems are found to be as high as 820 and 805 W m-1 K-1, respectively. Both the values are markedly higher than those of many prevailing 2D semiconducting materials such as phosphorene, hexagonal boron nitride, MoS2 and MoSe2. The effects of different modulators, such as system dimension, temperature, interlayer coupling strength and tensile strain, on the calculated thermal conductivity are evaluated. Monotonic decreasing trends of thermal conductivity with temperature and tensile strain are found, while a positive correlation between the thermal conductivity and system dimension is revealed. Interlayer coupling strength is found to have negligible effects on the in-plane thermal conductivity of bilayer C3N. The cross-plane interfacial thermal resistance (R) between two adjacent C3N layers is evaluated in the temperature range from 100 to 500 K and at different coupling strengths. The predicted R at temperature 300 K equals 3.4 × 10-8 K m-2 W-1. The maximum reductions of R can amount to 59% and 68% with respect to temperature and coupling strength, respectively. Our results provide theoretical guidance to future applications of C3N-based low-dimensional materials in electronic devices.

AB - Polyaniline (PANI) has been extensively studied in the past few decades owing to its broad applications in electronic devices. However, two dimensional PANI was not realized until very recently. In this work, the thermal transport properties of one of the newly synthesized 2D PANI structures, C3N, are systematically investigated using classical molecular dynamics simulations. The in-plane thermal conductivity (κ) of monolayer and bilayer C3N structures is computed, and the κ values for infinite-length systems are found to be as high as 820 and 805 W m-1 K-1, respectively. Both the values are markedly higher than those of many prevailing 2D semiconducting materials such as phosphorene, hexagonal boron nitride, MoS2 and MoSe2. The effects of different modulators, such as system dimension, temperature, interlayer coupling strength and tensile strain, on the calculated thermal conductivity are evaluated. Monotonic decreasing trends of thermal conductivity with temperature and tensile strain are found, while a positive correlation between the thermal conductivity and system dimension is revealed. Interlayer coupling strength is found to have negligible effects on the in-plane thermal conductivity of bilayer C3N. The cross-plane interfacial thermal resistance (R) between two adjacent C3N layers is evaluated in the temperature range from 100 to 500 K and at different coupling strengths. The predicted R at temperature 300 K equals 3.4 × 10-8 K m-2 W-1. The maximum reductions of R can amount to 59% and 68% with respect to temperature and coupling strength, respectively. Our results provide theoretical guidance to future applications of C3N-based low-dimensional materials in electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85042879879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042879879&partnerID=8YFLogxK

U2 - 10.1039/c7nr08458g

DO - 10.1039/c7nr08458g

M3 - Article

VL - 10

SP - 4301

EP - 4310

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 9

ER -