Monitoring of steam laser cleaning using optical probe techniques

N. Batta, Y. F. Lu, Xinwei Wang, J. Shi, D. W. Thompson, D. W. Doerr, D. R. Alexander

Research output: Contribution to journalConference article

Abstract

Steam laser cleaning of alumina and titanium carbide nanoparticles from silicon substrates is presented. A KrF excimer laser with a wavelength of 248 nm was used to irradiate the substrates in laser cleaning. A water layer of micrometer thickness was deposited on silicon substrates to improve the cleaning process. Cleaning efficiency was measured for different laser fluences ranging from 50 to 250 mJ/cm 2 and pulse numbers from 1 to 100. Research work was carried out to address the factors governing steam laser cleaning, during which thickness of water thin film and lift-off velocities of water films from Si substrate surfaces were monitored. In addition, one-dimensional simulations were employed to estimate the temperature increase on the material surfaces upon laser irradiation. Water layer thickness was measured using Fourier Transform Infrared Spectroscopy. Monitoring of both lift-off velocities and water thin film removal time were carried out by optical probing approaches using He-Ne laser of 632.8 nm wavelength.

Original languageEnglish (US)
Article number63
Pages (from-to)436-444
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5713
DOIs
StatePublished - Aug 23 2005
EventPhoton Processing in Microelectronics and Photonics IV - San Jose, CA, United States
Duration: Jan 24 2005Jan 27 2005

Fingerprint

Steam
Cleaning
steam
cleaning
Probe
Monitoring
Laser
Water
Substrate
Lasers
probes
lasers
Silicon
Substrates
water
Thin Films
Wavelength
Laser Ranging
Excimer Laser
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Monitoring of steam laser cleaning using optical probe techniques. / Batta, N.; Lu, Y. F.; Wang, Xinwei; Shi, J.; Thompson, D. W.; Doerr, D. W.; Alexander, D. R.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5713, 63, 23.08.2005, p. 436-444.

Research output: Contribution to journalConference article

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AU - Alexander, D. R.

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N2 - Steam laser cleaning of alumina and titanium carbide nanoparticles from silicon substrates is presented. A KrF excimer laser with a wavelength of 248 nm was used to irradiate the substrates in laser cleaning. A water layer of micrometer thickness was deposited on silicon substrates to improve the cleaning process. Cleaning efficiency was measured for different laser fluences ranging from 50 to 250 mJ/cm 2 and pulse numbers from 1 to 100. Research work was carried out to address the factors governing steam laser cleaning, during which thickness of water thin film and lift-off velocities of water films from Si substrate surfaces were monitored. In addition, one-dimensional simulations were employed to estimate the temperature increase on the material surfaces upon laser irradiation. Water layer thickness was measured using Fourier Transform Infrared Spectroscopy. Monitoring of both lift-off velocities and water thin film removal time were carried out by optical probing approaches using He-Ne laser of 632.8 nm wavelength.

AB - Steam laser cleaning of alumina and titanium carbide nanoparticles from silicon substrates is presented. A KrF excimer laser with a wavelength of 248 nm was used to irradiate the substrates in laser cleaning. A water layer of micrometer thickness was deposited on silicon substrates to improve the cleaning process. Cleaning efficiency was measured for different laser fluences ranging from 50 to 250 mJ/cm 2 and pulse numbers from 1 to 100. Research work was carried out to address the factors governing steam laser cleaning, during which thickness of water thin film and lift-off velocities of water films from Si substrate surfaces were monitored. In addition, one-dimensional simulations were employed to estimate the temperature increase on the material surfaces upon laser irradiation. Water layer thickness was measured using Fourier Transform Infrared Spectroscopy. Monitoring of both lift-off velocities and water thin film removal time were carried out by optical probing approaches using He-Ne laser of 632.8 nm wavelength.

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