Modifications in the unit cell geometry of sputtered niobium films caused by high energy ion bombardment

D. M. Pease, F. Namavar, J. Budnick, M. Choi, J. Groeger, F. A. Otter, Y. Bruynseraede, M. Clapp

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Abstract

The effect of high energy ion bombardment on the structure of sputtered niobium films has been studied. The 1000 Å films were sputtered onto silicon substrates. The films were oriented with a [110] fiber texture and were found to have a monoclinically distorted cell characteristic of compressive stress, where the stress direction is parallel to the film surface. Bombardment with 300 keV Xe+ ions, which for the most part did not reach the silicon interface, merely expanded the volume of the distorted as-sputtered niobium unit cell. However, bombardment with 600 keV Xe+ ions, which have a mean range extending to the interface, relaxed the unit cell toward the configuration of a cubic geometry.

Original languageEnglish (US)
Pages (from-to)239-247
Number of pages9
JournalThin Solid Films
Volume120
Issue number3
DOIs
StatePublished - Oct 19 1984

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Pease, D. M., Namavar, F., Budnick, J., Choi, M., Groeger, J., Otter, F. A., Bruynseraede, Y., & Clapp, M. (1984). Modifications in the unit cell geometry of sputtered niobium films caused by high energy ion bombardment. Thin Solid Films, 120(3), 239-247. https://doi.org/10.1016/0040-6090(84)90300-6