Modeling of metal-ferroelectric-insulator-semiconductor structures based on Langmuir-Blodgett copolymer films

Timothy J. Reece, Stephen Ducharme

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Among the ferroelectric thin films used in field-effect transistor devices; the ferroelectric copolymer of polyvinylidene fluoride (PVDF) (-CH 2-CF2-), with trifluoroethylene (TrFE) (-CHF-CF 2-), has distinct advantages, including low dielectric constant, low processing temperature, low cost, and compatibility with organic semiconductors. The operation of a metal-ferroelectric-insulator-semiconductor structure with P(VDF-TrFE) as the ferroelectric layer was analyzed and optimized by numerical solution of the Miller and McWhorter model. A model device consisting of 20 nm PVDF/TrFE on a 10-nm-thick high- k dielectric buffer exhibits a memory window of 5 V with an operating voltage of ±15 V. The operating voltage can be reduced to ±12 V by reducing the ferroelectric and dielectric thicknesses to 10 and 5 nm, respectively.

Original languageEnglish (US)
Article number124505
JournalJournal of Applied Physics
Volume106
Issue number12
DOIs
StatePublished - Dec 1 2009

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vinylidene
fluorides
copolymers
insulators
organic semiconductors
electric potential
metals
compatibility
field effect transistors
buffers
methylidyne
permittivity
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Modeling of metal-ferroelectric-insulator-semiconductor structures based on Langmuir-Blodgett copolymer films. / Reece, Timothy J.; Ducharme, Stephen.

In: Journal of Applied Physics, Vol. 106, No. 12, 124505, 01.12.2009.

Research output: Contribution to journalArticle

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