Mobility in single crystal Bi2Se3

J. A. Woollam, H. Beale, I. L. Spain

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Abstract

Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 T. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with ∼1025 m-3 total carrier concentration.

Original languageEnglish (US)
Pages (from-to)319-320
Number of pages2
JournalPhysics Letters A
Volume41
Issue number4
DOIs
Publication statusPublished - Oct 9 1972

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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