Mobility in single crystal Bi2Se3

J. A. Woollam, H. Beale, I. L. Spain

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 T. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with ∼1025 m-3 total carrier concentration.

Original languageEnglish (US)
Pages (from-to)319-320
Number of pages2
JournalPhysics Letters A
Volume41
Issue number4
DOIs
StatePublished - Oct 9 1972

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galvanomagnetic effects
single crystals
hole mobility
electron mobility
conductivity
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mobility in single crystal Bi2Se3. / Woollam, J. A.; Beale, H.; Spain, I. L.

In: Physics Letters A, Vol. 41, No. 4, 09.10.1972, p. 319-320.

Research output: Contribution to journalArticle

Woollam, J. A. ; Beale, H. ; Spain, I. L. / Mobility in single crystal Bi2Se3. In: Physics Letters A. 1972 ; Vol. 41, No. 4. pp. 319-320.
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