MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS: A REVIEW AND COMPARISON OF TECHNIQUES.

A. Azim Khan, John A. Woollam, Allen M. Hermann

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photo-current, surface photovoltage, transient decay, and luminescence.

Original languageEnglish (US)
Pages (from-to)17-56
Number of pages40
JournalApplied physics communications
Volume2
Issue number1-2
StatePublished - Jan 1 1982

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Energy gap
Gallium arsenide
Induced currents
Bibliographies
Luminescence
Electron beams
Solar cells
Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS : A REVIEW AND COMPARISON OF TECHNIQUES. / Khan, A. Azim; Woollam, John A.; Hermann, Allen M.

In: Applied physics communications, Vol. 2, No. 1-2, 01.01.1982, p. 17-56.

Research output: Contribution to journalArticle

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