Microstructure of the Cr underlayer and its effect on Sm-Co//Cr thin films

Y. Liu, B. W. Robertson, Z. S. Shan, Sy-Hwang Liou, David J Sellmyer

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Sm-Co film is a potential candidate for the future high density recording media of 10 Gb/in2 which requires bit sizes of the order of 300 nm and grain sizes of about 10 nm. This article investigates the microstructure of the Cr underlayer in Sm-Co thin films and its effect on Sm-Co thin films prepared by the dc magnetron sputtering technique. The grain size of the Cr underlayer is found to be about 25 nm. Grains with small angle misorientation usually form local agglomerates. Studies by transmission electron microscopy (TEM) bright field images at different defocus settings and by high resolution electron microscopy indicate that a large proportion of the grain boundaries have gaps. The gap width (about 1-3 nm) varies from place to place. The Sm-Co films deposited on the Cr underlayer inherit similar gaps at positions adjacent to the grain boundary gaps of the Cr underlayer. Such gaps produce grain-like contrast of about 25 nm in TEM bright field images. However, such contrast becomes weak as the thickness of the film increases and disappears at a thickness of 96 nm, suggesting the gaps are sealed at places far from the Cr underlayer. The effect of the Cr underlayer on magnetic properties are discussed.

Original languageEnglish (US)
Pages (from-to)3831-3835
Number of pages5
JournalJournal of Applied Physics
Volume77
Issue number8
DOIs
StatePublished - Dec 1 1995

Fingerprint

microstructure
thin films
grain boundaries
grain size
transmission electron microscopy
misalignment
electron microscopy
proportion
magnetron sputtering
recording
magnetic properties
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Microstructure of the Cr underlayer and its effect on Sm-Co//Cr thin films. / Liu, Y.; Robertson, B. W.; Shan, Z. S.; Liou, Sy-Hwang; Sellmyer, David J.

In: Journal of Applied Physics, Vol. 77, No. 8, 01.12.1995, p. 3831-3835.

Research output: Contribution to journalArticle

@article{295ca80bf10c46588397a916d4173bf8,
title = "Microstructure of the Cr underlayer and its effect on Sm-Co//Cr thin films",
abstract = "Sm-Co film is a potential candidate for the future high density recording media of 10 Gb/in2 which requires bit sizes of the order of 300 nm and grain sizes of about 10 nm. This article investigates the microstructure of the Cr underlayer in Sm-Co thin films and its effect on Sm-Co thin films prepared by the dc magnetron sputtering technique. The grain size of the Cr underlayer is found to be about 25 nm. Grains with small angle misorientation usually form local agglomerates. Studies by transmission electron microscopy (TEM) bright field images at different defocus settings and by high resolution electron microscopy indicate that a large proportion of the grain boundaries have gaps. The gap width (about 1-3 nm) varies from place to place. The Sm-Co films deposited on the Cr underlayer inherit similar gaps at positions adjacent to the grain boundary gaps of the Cr underlayer. Such gaps produce grain-like contrast of about 25 nm in TEM bright field images. However, such contrast becomes weak as the thickness of the film increases and disappears at a thickness of 96 nm, suggesting the gaps are sealed at places far from the Cr underlayer. The effect of the Cr underlayer on magnetic properties are discussed.",
author = "Y. Liu and Robertson, {B. W.} and Shan, {Z. S.} and Sy-Hwang Liou and Sellmyer, {David J}",
year = "1995",
month = "12",
day = "1",
doi = "10.1063/1.358559",
language = "English (US)",
volume = "77",
pages = "3831--3835",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Microstructure of the Cr underlayer and its effect on Sm-Co//Cr thin films

AU - Liu, Y.

AU - Robertson, B. W.

AU - Shan, Z. S.

AU - Liou, Sy-Hwang

AU - Sellmyer, David J

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Sm-Co film is a potential candidate for the future high density recording media of 10 Gb/in2 which requires bit sizes of the order of 300 nm and grain sizes of about 10 nm. This article investigates the microstructure of the Cr underlayer in Sm-Co thin films and its effect on Sm-Co thin films prepared by the dc magnetron sputtering technique. The grain size of the Cr underlayer is found to be about 25 nm. Grains with small angle misorientation usually form local agglomerates. Studies by transmission electron microscopy (TEM) bright field images at different defocus settings and by high resolution electron microscopy indicate that a large proportion of the grain boundaries have gaps. The gap width (about 1-3 nm) varies from place to place. The Sm-Co films deposited on the Cr underlayer inherit similar gaps at positions adjacent to the grain boundary gaps of the Cr underlayer. Such gaps produce grain-like contrast of about 25 nm in TEM bright field images. However, such contrast becomes weak as the thickness of the film increases and disappears at a thickness of 96 nm, suggesting the gaps are sealed at places far from the Cr underlayer. The effect of the Cr underlayer on magnetic properties are discussed.

AB - Sm-Co film is a potential candidate for the future high density recording media of 10 Gb/in2 which requires bit sizes of the order of 300 nm and grain sizes of about 10 nm. This article investigates the microstructure of the Cr underlayer in Sm-Co thin films and its effect on Sm-Co thin films prepared by the dc magnetron sputtering technique. The grain size of the Cr underlayer is found to be about 25 nm. Grains with small angle misorientation usually form local agglomerates. Studies by transmission electron microscopy (TEM) bright field images at different defocus settings and by high resolution electron microscopy indicate that a large proportion of the grain boundaries have gaps. The gap width (about 1-3 nm) varies from place to place. The Sm-Co films deposited on the Cr underlayer inherit similar gaps at positions adjacent to the grain boundary gaps of the Cr underlayer. Such gaps produce grain-like contrast of about 25 nm in TEM bright field images. However, such contrast becomes weak as the thickness of the film increases and disappears at a thickness of 96 nm, suggesting the gaps are sealed at places far from the Cr underlayer. The effect of the Cr underlayer on magnetic properties are discussed.

UR - http://www.scopus.com/inward/record.url?scp=36449009606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449009606&partnerID=8YFLogxK

U2 - 10.1063/1.358559

DO - 10.1063/1.358559

M3 - Article

AN - SCOPUS:36449009606

VL - 77

SP - 3831

EP - 3835

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -