Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN

A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann, M. Schubert

Research output: Contribution to journalArticle

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Abstract

Free-standing GaN of -330 μm thickness with low defect density was prepared by hydride vapor-phase epitaxy (HVPE) on sapphire in a vertical atmospheric-pressure reactor and a subsequent laser-induced liftoff process. The structural and optical properties of the material were assessed by various characterization techniques, like X-ray diffraction, photo- and cathodoluminescence, spectroscopic ellipsometry, positron annihilation spectroscopy, and transmission electron microscopy. Here, we focus on μ-Raman scattering profiling studies providing the vertical strain distribution and the evolution of the crystalline quality with increasing layer thickness. Profiles of the free-carrier concentration are obtained from monitoring the LO-phonon plasmon coupled mode. Comparative investigations are performed on the material before and after separation of the sapphire substrate. The GaN material presented here is well capable of serving as a substrate for further homoepitaxial strain-relaxed and crack-free growth needed for fabrication of high-quality III-nitride device heterostructures.

Original languageEnglish (US)
Pages (from-to)2773-2776
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
StatePublished - Sep 1 2004

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Vapor phase epitaxy
Hydrides
vapor phase epitaxy
hydrides
Raman scattering
sapphire
Aluminum Oxide
Raman spectra
Sapphire
strain distribution
cathodoluminescence
positron annihilation
Positron annihilation spectroscopy
coupled modes
ellipsometry
nitrides
atmospheric pressure
Cathodoluminescence
Spectroscopic ellipsometry
cracks

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN. / Kasic, A.; Gogova, D.; Larsson, H.; Hemmingsson, C.; Ivanov, I.; Monemar, B.; Bundesmann, C.; Schubert, M.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 12, 01.09.2004, p. 2773-2776.

Research output: Contribution to journalArticle

Kasic, A, Gogova, D, Larsson, H, Hemmingsson, C, Ivanov, I, Monemar, B, Bundesmann, C & Schubert, M 2004, 'Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN', Physica Status Solidi (A) Applied Research, vol. 201, no. 12, pp. 2773-2776. https://doi.org/10.1002/pssa.200405013
Kasic A, Gogova D, Larsson H, Hemmingsson C, Ivanov I, Monemar B et al. Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN. Physica Status Solidi (A) Applied Research. 2004 Sep 1;201(12):2773-2776. https://doi.org/10.1002/pssa.200405013
Kasic, A. ; Gogova, D. ; Larsson, H. ; Hemmingsson, C. ; Ivanov, I. ; Monemar, B. ; Bundesmann, C. ; Schubert, M. / Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN. In: Physica Status Solidi (A) Applied Research. 2004 ; Vol. 201, No. 12. pp. 2773-2776.
@article{f4c4ca471c8a493d8772436b70e9a68b,
title = "Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN",
abstract = "Free-standing GaN of -330 μm thickness with low defect density was prepared by hydride vapor-phase epitaxy (HVPE) on sapphire in a vertical atmospheric-pressure reactor and a subsequent laser-induced liftoff process. The structural and optical properties of the material were assessed by various characterization techniques, like X-ray diffraction, photo- and cathodoluminescence, spectroscopic ellipsometry, positron annihilation spectroscopy, and transmission electron microscopy. Here, we focus on μ-Raman scattering profiling studies providing the vertical strain distribution and the evolution of the crystalline quality with increasing layer thickness. Profiles of the free-carrier concentration are obtained from monitoring the LO-phonon plasmon coupled mode. Comparative investigations are performed on the material before and after separation of the sapphire substrate. The GaN material presented here is well capable of serving as a substrate for further homoepitaxial strain-relaxed and crack-free growth needed for fabrication of high-quality III-nitride device heterostructures.",
author = "A. Kasic and D. Gogova and H. Larsson and C. Hemmingsson and I. Ivanov and B. Monemar and C. Bundesmann and M. Schubert",
year = "2004",
month = "9",
day = "1",
doi = "10.1002/pssa.200405013",
language = "English (US)",
volume = "201",
pages = "2773--2776",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "12",

}

TY - JOUR

T1 - Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN

AU - Kasic, A.

AU - Gogova, D.

AU - Larsson, H.

AU - Hemmingsson, C.

AU - Ivanov, I.

AU - Monemar, B.

AU - Bundesmann, C.

AU - Schubert, M.

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Free-standing GaN of -330 μm thickness with low defect density was prepared by hydride vapor-phase epitaxy (HVPE) on sapphire in a vertical atmospheric-pressure reactor and a subsequent laser-induced liftoff process. The structural and optical properties of the material were assessed by various characterization techniques, like X-ray diffraction, photo- and cathodoluminescence, spectroscopic ellipsometry, positron annihilation spectroscopy, and transmission electron microscopy. Here, we focus on μ-Raman scattering profiling studies providing the vertical strain distribution and the evolution of the crystalline quality with increasing layer thickness. Profiles of the free-carrier concentration are obtained from monitoring the LO-phonon plasmon coupled mode. Comparative investigations are performed on the material before and after separation of the sapphire substrate. The GaN material presented here is well capable of serving as a substrate for further homoepitaxial strain-relaxed and crack-free growth needed for fabrication of high-quality III-nitride device heterostructures.

AB - Free-standing GaN of -330 μm thickness with low defect density was prepared by hydride vapor-phase epitaxy (HVPE) on sapphire in a vertical atmospheric-pressure reactor and a subsequent laser-induced liftoff process. The structural and optical properties of the material were assessed by various characterization techniques, like X-ray diffraction, photo- and cathodoluminescence, spectroscopic ellipsometry, positron annihilation spectroscopy, and transmission electron microscopy. Here, we focus on μ-Raman scattering profiling studies providing the vertical strain distribution and the evolution of the crystalline quality with increasing layer thickness. Profiles of the free-carrier concentration are obtained from monitoring the LO-phonon plasmon coupled mode. Comparative investigations are performed on the material before and after separation of the sapphire substrate. The GaN material presented here is well capable of serving as a substrate for further homoepitaxial strain-relaxed and crack-free growth needed for fabrication of high-quality III-nitride device heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=7044231338&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7044231338&partnerID=8YFLogxK

U2 - 10.1002/pssa.200405013

DO - 10.1002/pssa.200405013

M3 - Article

AN - SCOPUS:7044231338

VL - 201

SP - 2773

EP - 2776

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 12

ER -