Method for monitoring GaAs photocathode heat cleaning temperature

N. B. Clayburn, K. W. Trantham, M. Dunn, T. J. Gay

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Before a GaAs photocathode can be activated to achieve a negative electron affinity condition, the GaAs crystal must be cleaned. This is most commonly done by ohmic, radiative, or electron bombardment heating. We report a new technique to monitor the temperature of heated GaAs photocathodes by observation with a camera. The method is robust and yields the same temperatures for different GaAs samples heated using different methods in different mounting configurations.

Original languageEnglish (US)
Article number124903
JournalReview of Scientific Instruments
Volume87
Issue number12
DOIs
StatePublished - Dec 1 2016

Fingerprint

Photocathodes
photocathodes
cleaning
bombardment
Cleaning
negative electron affinity
heat
Electron affinity
electron bombardment
Monitoring
mounting
Mountings
Cameras
cameras
Heating
Temperature
Crystals
heating
temperature
Electrons

ASJC Scopus subject areas

  • Instrumentation

Cite this

Method for monitoring GaAs photocathode heat cleaning temperature. / Clayburn, N. B.; Trantham, K. W.; Dunn, M.; Gay, T. J.

In: Review of Scientific Instruments, Vol. 87, No. 12, 124903, 01.12.2016.

Research output: Contribution to journalArticle

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