Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai, W. D. Song

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The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.

Original languageEnglish (US)
Pages (from-to)6311-6319
Number of pages9
JournalJournal of Applied Physics
Issue number10 1
Publication statusPublished - May 15 2003


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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