Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai, W. D. Song

Research output: Contribution to journalArticle

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Abstract

The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.

Original languageEnglish (US)
Pages (from-to)6311-6319
Number of pages9
JournalJournal of Applied Physics
Volume93
Issue number10 1
DOIs
StatePublished - May 15 2003

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pulsed laser deposition
nanocrystals
argon
photoluminescence
silicon
oxygen
spacing
gases

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient. / Chen, X. Y.; Lu, Y. F.; Wu, Y. H.; Cho, B. J.; Liu, M. H.; Dai, D. Y.; Song, W. D.

In: Journal of Applied Physics, Vol. 93, No. 10 1, 15.05.2003, p. 6311-6319.

Research output: Contribution to journalArticle

Chen, X. Y. ; Lu, Y. F. ; Wu, Y. H. ; Cho, B. J. ; Liu, M. H. ; Dai, D. Y. ; Song, W. D. / Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 10 1. pp. 6311-6319.
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