Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai, W. D. Song

Research output: Contribution to journalArticle

76 Scopus citations

Abstract

The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.

Original languageEnglish (US)
Pages (from-to)6311-6319
Number of pages9
JournalJournal of Applied Physics
Volume93
Issue number10 1
DOIs
Publication statusPublished - May 15 2003

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this