Mechanism of AC electrical transport of carriers in freshly formed and aged porous silicon

V. P. Parkhutik, E. S. Matveeva, Fereydoon Namavar, Nader Kalcoran

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Electrical impedance of aging porous silicon layers (PS) was studied applying the regime of temperature cycling (from -50 to +150°C) in a range of alternating current (a.c.) frequencies 0.2 to 105 Hz (amplitude 1 V). Freshly obtained PS exhibits changes of electrical properties at temperatures above 50°C, presumably associated with the escape of electrolyte from the pores. A.C. electrical conductivity of PS is very sensitive to its postanodizing treatments (heat-treatment, pore filling by inert electrolyte, evacuation at increased temperatures, annealing in nitrogen). Activation energy for the electrical conduction ranges from 0.1 to 0.23 eV depending on a.c. frequency and postanodizing treatments. An electric equivalent circuit was designed to fit the experimental data acquired at differently treated PS samples. The components of the equivalent circuit were assigned to physical elements of PS (a surface phase on top of PS and a layer of underlying bulk material). Based on the measurements of the electrical impedance and chemical composition of PS films the mechanism of electrical conduction is assumed to be a charge carrier migration through the localized states associated with the sur-face impurities (hydrides and/or oxides of silicon). The obtained impedance data show the strong influence of residuals of the electrolyte inside the pores of freshly prepared PS on its aging stability.

Original languageEnglish (US)
Pages (from-to)3943-3949
Number of pages7
JournalJournal of the Electrochemical Society
Volume143
Issue number12
DOIs
StatePublished - Dec 1996

Fingerprint

Porous silicon
porous silicon
alternating current
Electrolytes
Acoustic impedance
electrolytes
Equivalent circuits
electrical impedance
porosity
equivalent circuits
Aging of materials
conduction
Silicon
Charge carriers
Hydrides
Temperature
Oxides
Electric properties
hydrides
escape

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Mechanism of AC electrical transport of carriers in freshly formed and aged porous silicon. / Parkhutik, V. P.; Matveeva, E. S.; Namavar, Fereydoon; Kalcoran, Nader.

In: Journal of the Electrochemical Society, Vol. 143, No. 12, 12.1996, p. 3943-3949.

Research output: Contribution to journalArticle

Parkhutik, V. P. ; Matveeva, E. S. ; Namavar, Fereydoon ; Kalcoran, Nader. / Mechanism of AC electrical transport of carriers in freshly formed and aged porous silicon. In: Journal of the Electrochemical Society. 1996 ; Vol. 143, No. 12. pp. 3943-3949.
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