Materials characterization using THz ellipsometry

T. Hofmann, C. M. Herzinger, J. A. Woollam, M. Schubert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm-3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.

Original languageEnglish (US)
Title of host publicationMaterials Research for Terahertz Technology Development
Pages19-24
Number of pages6
Publication statusPublished - Dec 1 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 13 2009Apr 17 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1163
ISSN (Print)0272-9172

Conference

Conference2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/13/094/17/09

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hofmann, T., Herzinger, C. M., Woollam, J. A., & Schubert, M. (2009). Materials characterization using THz ellipsometry. In Materials Research for Terahertz Technology Development (pp. 19-24). (Materials Research Society Symposium Proceedings; Vol. 1163).