Material and electrical characterization of HfO2 films for MIM capacitors application

Hang Hu, Chunxiang Zhu, Yongfeng Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, N. Yakovlev

Research output: Contribution to journalConference article

Abstract

Thin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200°C shows an overall high performance, such as a high capacitance density of ∼3.0 fF/μM2, a low leakage current of 2×10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

Original languageEnglish (US)
Pages (from-to)363-369
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume766
StatePublished - Dec 1 2003
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States
Duration: Apr 21 2003Apr 25 2003

Fingerprint

capacitors
Capacitors
Metals
insulators
metals
analog circuits
Analog circuits
Pulsed laser deposition
Stoichiometry
Leakage currents
pulsed laser deposition
stoichiometry
Atomic force microscopy
Electric properties
leakage
Capacitance
mass spectroscopy
capacitance
electrical properties
atomic force microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Material and electrical characterization of HfO2 films for MIM capacitors application. / Hu, Hang; Zhu, Chunxiang; Lu, Yongfeng; Wu, Y. H.; Liew, T.; Li, M. F.; Cho, B. J.; Choi, W. K.; Yakovlev, N.

In: Materials Research Society Symposium - Proceedings, Vol. 766, 01.12.2003, p. 363-369.

Research output: Contribution to journalConference article

Hu, H, Zhu, C, Lu, Y, Wu, YH, Liew, T, Li, MF, Cho, BJ, Choi, WK & Yakovlev, N 2003, 'Material and electrical characterization of HfO2 films for MIM capacitors application', Materials Research Society Symposium - Proceedings, vol. 766, pp. 363-369.
Hu, Hang ; Zhu, Chunxiang ; Lu, Yongfeng ; Wu, Y. H. ; Liew, T. ; Li, M. F. ; Cho, B. J. ; Choi, W. K. ; Yakovlev, N. / Material and electrical characterization of HfO2 films for MIM capacitors application. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 766. pp. 363-369.
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AU - Hu, Hang

AU - Zhu, Chunxiang

AU - Lu, Yongfeng

AU - Wu, Y. H.

AU - Liew, T.

AU - Li, M. F.

AU - Cho, B. J.

AU - Choi, W. K.

AU - Yakovlev, N.

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N2 - Thin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200°C shows an overall high performance, such as a high capacitance density of ∼3.0 fF/μM2, a low leakage current of 2×10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

AB - Thin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200°C shows an overall high performance, such as a high capacitance density of ∼3.0 fF/μM2, a low leakage current of 2×10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

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