Luminescence studies of erbium-doped gallium nitride

C. H. Qiu, M. Leksono, J. T. Torvik, R. J. Feuerstein, J. I. Pankove, F. Namavar

Research output: Contribution to conferencePaper

Abstract

The GaN thin film was grown on a sapphire substrate using low pressure metal organic chemical vapor deposition from triethyl-gallium and ammonia at 1050°C. Both Er and oxygen were implanted to a concentration of approximately 1020 cm-3. Oxygen bonding puts the Er in a 3+ state, which is necessary for luminescence. Following implantation, the GaN:Er was annealed at 900°C for one hour in an ammonia atmosphere. The wafer was then placed in a cryogenic cathodoluminescence (CL) measurement system and cooled to 5 K. The electron beam was 15 kV at 20 μA. A prism spectrometer with a lead sulphide (PbS) detector, chopper, and lock-in amplifier was used to find the 1.5 μm luminescence signal. A photomultiplier was used for the UV-visible part of the spectrum. Cathodoluminescence spectrum of Er3+ doped GaN is presented and discussed.

Original languageEnglish (US)
Pages286-287
Number of pages2
StatePublished - Dec 1 1994
EventProceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth
Duration: Aug 28 1994Sep 2 1994

Other

OtherProceedings of the 5th European Quantum Electronics Conference
CityAmsterdam, Neth
Period8/28/949/2/94

Fingerprint

Gallium nitride
Cathodoluminescence
Erbium
Luminescence
Ammonia
Oxygen
Photomultipliers
Organic chemicals
Gallium
Prisms
Sapphire
Cryogenics
Spectrometers
Chemical vapor deposition
Electron beams
Lead
Detectors
Thin films
Substrates
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Qiu, C. H., Leksono, M., Torvik, J. T., Feuerstein, R. J., Pankove, J. I., & Namavar, F. (1994). Luminescence studies of erbium-doped gallium nitride. 286-287. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, .

Luminescence studies of erbium-doped gallium nitride. / Qiu, C. H.; Leksono, M.; Torvik, J. T.; Feuerstein, R. J.; Pankove, J. I.; Namavar, F.

1994. 286-287 Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, .

Research output: Contribution to conferencePaper

Qiu, CH, Leksono, M, Torvik, JT, Feuerstein, RJ, Pankove, JI & Namavar, F 1994, 'Luminescence studies of erbium-doped gallium nitride' Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, 8/28/94 - 9/2/94, pp. 286-287.
Qiu CH, Leksono M, Torvik JT, Feuerstein RJ, Pankove JI, Namavar F. Luminescence studies of erbium-doped gallium nitride. 1994. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, .
Qiu, C. H. ; Leksono, M. ; Torvik, J. T. ; Feuerstein, R. J. ; Pankove, J. I. ; Namavar, F. / Luminescence studies of erbium-doped gallium nitride. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, .2 p.
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AU - Qiu, C. H.

AU - Leksono, M.

AU - Torvik, J. T.

AU - Feuerstein, R. J.

AU - Pankove, J. I.

AU - Namavar, F.

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