Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon

S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmidt, Mathias Schubert, M. Lorenz, M. Grundmann

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

C-axis oriented ZnO thin films were grown on silicon (100) and (111) substrates by pulsed laser deposition. Low temperature photoluminescence spectra show besides the peaks of free excitons, of defect bound excitons, and of a donor-acceptor pair transition a new doublet at 3.328/3.332 eV. The doublet seems to originate from the columnar textured ZnO film structure. A corresponding structural dependence of the broadening parameter of the infrared dielectric functions was derived from spectroscopic ellipsometry in the spectral range from 380 to 1200 cm- 1. The wave numbers of the E1 transverse optical and A1 longitudinal optical phonon modes of the ZnO films on silicon are determined to be 406 and 573 cm- 1, respectively. These values are slightly smaller than those of single-crystalline ZnO thin films on sapphire.

Original languageEnglish (US)
Pages (from-to)234-239
Number of pages6
JournalThin Solid Films
Volume496
Issue number2
DOIs
StatePublished - Feb 21 2006

Fingerprint

Silicon
Pulsed lasers
Excitons
pulsed lasers
Photoluminescence
excitons
Infrared radiation
photoluminescence
Thin films
Spectroscopic ellipsometry
Aluminum Oxide
silicon
Pulsed laser deposition
thin films
Electron transitions
Sapphire
ellipsometry
pulsed laser deposition
sapphire
Crystalline materials

Keywords

  • Infrared ellipsometry
  • Luminescence
  • Pulsed laser deposition
  • Thin films
  • Zinc oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Heitsch, S., Bundesmann, C., Wagner, G., Zimmermann, G., Rahm, A., Hochmuth, H., ... Grundmann, M. (2006). Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon. Thin Solid Films, 496(2), 234-239. https://doi.org/10.1016/j.tsf.2005.08.305

Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon. / Heitsch, S.; Bundesmann, C.; Wagner, G.; Zimmermann, G.; Rahm, A.; Hochmuth, H.; Benndorf, G.; Schmidt, H.; Schubert, Mathias; Lorenz, M.; Grundmann, M.

In: Thin Solid Films, Vol. 496, No. 2, 21.02.2006, p. 234-239.

Research output: Contribution to journalArticle

Heitsch, S, Bundesmann, C, Wagner, G, Zimmermann, G, Rahm, A, Hochmuth, H, Benndorf, G, Schmidt, H, Schubert, M, Lorenz, M & Grundmann, M 2006, 'Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon', Thin Solid Films, vol. 496, no. 2, pp. 234-239. https://doi.org/10.1016/j.tsf.2005.08.305
Heitsch, S. ; Bundesmann, C. ; Wagner, G. ; Zimmermann, G. ; Rahm, A. ; Hochmuth, H. ; Benndorf, G. ; Schmidt, H. ; Schubert, Mathias ; Lorenz, M. ; Grundmann, M. / Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon. In: Thin Solid Films. 2006 ; Vol. 496, No. 2. pp. 234-239.
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