Low-temperature (< 100°C) growth of AIN by ion beam assisted deposition

H. Karimy, E. Tobin, R. Bricault, A. Cremins-Costa, P. Colter, D. Perry, Fereydoon Namavar

Research output: Contribution to journalConference article

Abstract

During the past few years, there has been growing interest in aluminum nitride (AIN) thin films because of their excellent optical, electrical, chemical, mechanical and high-temperature properties. Ion beam assisted deposition (IBAD) was used to deposit AIN films on flat and curved substrates, including Si, SIMOX, sapphire, quartz, aluminum, stainless steel, and carbon, at temperatures substantially below 100°C. The objective was to enhance the physical and mechanical properties of AIN film by controlling the crystal size and structures. Experimental results, as obtained by Rutherford backscattering spectroscopy (RBS) show the formation of stoichiometric AIN. Plan-view/cross-sectional transmission electron microscopy (TEM), clearly demonstrated the formation of a smooth, uniform AIN film. Electron diffraction and dark field TEM studies clearly show the growth of AIN crystallites with cubic and/or hexagonal structures and dimensions of 30 to 100angstrom. The films are transparent and have good adhesion to all substrates. In addition to excellent high temperature (up to 1050°C measured) and chemical stability (shown through a variety of acid tests), these films have demonstrated extreme hardness, greater than two times that of bulk AIN.

Original languageEnglish (US)
Pages (from-to)551-556
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume396
StatePublished - Jan 1 1996

Fingerprint

Ion beam assisted deposition
Aluminum nitride
aluminum nitrides
ion beams
Temperature
Transmission electron microscopy
High temperature properties
transmission electron microscopy
Quartz
Aluminum Oxide
Stainless Steel
Chemical stability
Rutherford backscattering spectroscopy
Substrates
aluminum nitride
Aluminum
Crystallites
Sapphire
Electron diffraction
crystallites

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Karimy, H., Tobin, E., Bricault, R., Cremins-Costa, A., Colter, P., Perry, D., & Namavar, F. (1996). Low-temperature (< 100°C) growth of AIN by ion beam assisted deposition. Materials Research Society Symposium - Proceedings, 396, 551-556.

Low-temperature (< 100°C) growth of AIN by ion beam assisted deposition. / Karimy, H.; Tobin, E.; Bricault, R.; Cremins-Costa, A.; Colter, P.; Perry, D.; Namavar, Fereydoon.

In: Materials Research Society Symposium - Proceedings, Vol. 396, 01.01.1996, p. 551-556.

Research output: Contribution to journalConference article

Karimy, H, Tobin, E, Bricault, R, Cremins-Costa, A, Colter, P, Perry, D & Namavar, F 1996, 'Low-temperature (< 100°C) growth of AIN by ion beam assisted deposition', Materials Research Society Symposium - Proceedings, vol. 396, pp. 551-556.
Karimy H, Tobin E, Bricault R, Cremins-Costa A, Colter P, Perry D et al. Low-temperature (< 100°C) growth of AIN by ion beam assisted deposition. Materials Research Society Symposium - Proceedings. 1996 Jan 1;396:551-556.
Karimy, H. ; Tobin, E. ; Bricault, R. ; Cremins-Costa, A. ; Colter, P. ; Perry, D. ; Namavar, Fereydoon. / Low-temperature (< 100°C) growth of AIN by ion beam assisted deposition. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 396. pp. 551-556.
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