Low-temperature c -axis oriented growth of nanocrystalline ZnO thin films on Si substrates by plasma assisted pulsed laser deposition

J. Shao, Y. Q. Shen, J. Sun, N. Xu, D. Yu, Y. F. Lu, J. D. Wu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Nanocrystalline zinc oxide (nc-ZnO) thin films with c -axis orientation were deposited on Si (100) substrates at a temperature lower than 100 °C by plasma assisted pulsed laser deposition from metallic zinc. Oxygen plasma generated by electron cyclotron resonance (ECR) microwave discharge was used as a reactive and energetic source to assist reactive deposition and oriented growth of nc-ZnO thin films. Atomic force microscopy (AFM) observation revealed the smooth surface appearance of the deposited nc-ZnO films. Analysis from Raman scattering and Fourier-transform infrared spectroscopy (FTIR) demonstrated the wurtzite structure of the deposited films. Structural characterization from x-ray diffraction (XRD) analysis showed the film growth with c -axis orientation perpendicular to the substrate surface and the nanocrystalline formation with average c -axis-oriented crystallites of 12 nm. The deposited nc-ZnO films are optically transparent in the visible and near infrared regions and the optical band gap was determined to be 3.32 eV.

Original languageEnglish (US)
Pages (from-to)214-218
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number1
DOIs
StatePublished - Feb 8 2008

Fingerprint

Pulsed laser deposition
Zinc oxide
zinc oxides
Oxide films
pulsed laser deposition
Plasmas
Thin films
Substrates
thin films
oxide films
Temperature
Electron cyclotron resonance
Optical band gaps
oxygen plasma
Film growth
electron cyclotron resonance
Crystallites
wurtzite
crystallites
Fourier transform infrared spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Low-temperature c -axis oriented growth of nanocrystalline ZnO thin films on Si substrates by plasma assisted pulsed laser deposition. / Shao, J.; Shen, Y. Q.; Sun, J.; Xu, N.; Yu, D.; Lu, Y. F.; Wu, J. D.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 1, 08.02.2008, p. 214-218.

Research output: Contribution to journalArticle

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AU - Shao, J.

AU - Shen, Y. Q.

AU - Sun, J.

AU - Xu, N.

AU - Yu, D.

AU - Lu, Y. F.

AU - Wu, J. D.

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N2 - Nanocrystalline zinc oxide (nc-ZnO) thin films with c -axis orientation were deposited on Si (100) substrates at a temperature lower than 100 °C by plasma assisted pulsed laser deposition from metallic zinc. Oxygen plasma generated by electron cyclotron resonance (ECR) microwave discharge was used as a reactive and energetic source to assist reactive deposition and oriented growth of nc-ZnO thin films. Atomic force microscopy (AFM) observation revealed the smooth surface appearance of the deposited nc-ZnO films. Analysis from Raman scattering and Fourier-transform infrared spectroscopy (FTIR) demonstrated the wurtzite structure of the deposited films. Structural characterization from x-ray diffraction (XRD) analysis showed the film growth with c -axis orientation perpendicular to the substrate surface and the nanocrystalline formation with average c -axis-oriented crystallites of 12 nm. The deposited nc-ZnO films are optically transparent in the visible and near infrared regions and the optical band gap was determined to be 3.32 eV.

AB - Nanocrystalline zinc oxide (nc-ZnO) thin films with c -axis orientation were deposited on Si (100) substrates at a temperature lower than 100 °C by plasma assisted pulsed laser deposition from metallic zinc. Oxygen plasma generated by electron cyclotron resonance (ECR) microwave discharge was used as a reactive and energetic source to assist reactive deposition and oriented growth of nc-ZnO thin films. Atomic force microscopy (AFM) observation revealed the smooth surface appearance of the deposited nc-ZnO films. Analysis from Raman scattering and Fourier-transform infrared spectroscopy (FTIR) demonstrated the wurtzite structure of the deposited films. Structural characterization from x-ray diffraction (XRD) analysis showed the film growth with c -axis orientation perpendicular to the substrate surface and the nanocrystalline formation with average c -axis-oriented crystallites of 12 nm. The deposited nc-ZnO films are optically transparent in the visible and near infrared regions and the optical band gap was determined to be 3.32 eV.

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