Low defect, high quality SIMOX material for bipolar device applications.

Fereydoon Namavar, Elisabetta Cortesi, Piran Sioshansi

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The threading dislocation densities of 108/cm2 to 1010/cm2 that are typical of SIMOX material are detrimental for bipolar structures and orders-of-magnitude reduction of defect density is still required to permit SIMOX (separation by implanted oxygen) material to be acceptable for high-performance bipolar and analog devices. Two methods have been developed to produce low-defect SIMOX wafers. In the first method, threading dislocation defects are reduced by low-dose Ge implantation and subsequent solid-phase epitaxial (SPE) regrowth. Ge implantation produces a strained and amorphized layer that during the SPE acts as an artificial interface and deflects or stops the propagation of threading dislocations. In the second method, threading dislocations are prevented by a multiple low-dose implantation and high-temperature annealing. No defects were observed for implantation with doses up to 8 × 1017 O+/cm2, and threading dislocation density has been reduced by three to four orders of magnitude. Continuous and uniform buried layers are formed with about 65% of the dose required by the standard SIMOX process. Results have shown that by these methods low defect, superior quality, SIMOX wafers for submicron CMOS and bipolar device can be produced.

Original languageEnglish (US)
Number of pages1
StatePublished - Dec 1 1988
EventProceedings of 1988 IEEE SIS/SOI Technology Workshop - St. Simons Island, GA, USA
Duration: Oct 3 1988Oct 5 1988

Other

OtherProceedings of 1988 IEEE SIS/SOI Technology Workshop
CitySt. Simons Island, GA, USA
Period10/3/8810/5/88

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Defects
Oxygen
Defect density
Annealing
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Namavar, F., Cortesi, E., & Sioshansi, P. (1988). Low defect, high quality SIMOX material for bipolar device applications.. Paper presented at Proceedings of 1988 IEEE SIS/SOI Technology Workshop, St. Simons Island, GA, USA, .

Low defect, high quality SIMOX material for bipolar device applications. / Namavar, Fereydoon; Cortesi, Elisabetta; Sioshansi, Piran.

1988. Paper presented at Proceedings of 1988 IEEE SIS/SOI Technology Workshop, St. Simons Island, GA, USA, .

Research output: Contribution to conferencePaper

Namavar, F, Cortesi, E & Sioshansi, P 1988, 'Low defect, high quality SIMOX material for bipolar device applications.' Paper presented at Proceedings of 1988 IEEE SIS/SOI Technology Workshop, St. Simons Island, GA, USA, 10/3/88 - 10/5/88, .
Namavar F, Cortesi E, Sioshansi P. Low defect, high quality SIMOX material for bipolar device applications.. 1988. Paper presented at Proceedings of 1988 IEEE SIS/SOI Technology Workshop, St. Simons Island, GA, USA, .
Namavar, Fereydoon ; Cortesi, Elisabetta ; Sioshansi, Piran. / Low defect, high quality SIMOX material for bipolar device applications. Paper presented at Proceedings of 1988 IEEE SIS/SOI Technology Workshop, St. Simons Island, GA, USA, .1 p.
@conference{7b8a571144834936984d475744a28349,
title = "Low defect, high quality SIMOX material for bipolar device applications.",
abstract = "The threading dislocation densities of 108/cm2 to 1010/cm2 that are typical of SIMOX material are detrimental for bipolar structures and orders-of-magnitude reduction of defect density is still required to permit SIMOX (separation by implanted oxygen) material to be acceptable for high-performance bipolar and analog devices. Two methods have been developed to produce low-defect SIMOX wafers. In the first method, threading dislocation defects are reduced by low-dose Ge implantation and subsequent solid-phase epitaxial (SPE) regrowth. Ge implantation produces a strained and amorphized layer that during the SPE acts as an artificial interface and deflects or stops the propagation of threading dislocations. In the second method, threading dislocations are prevented by a multiple low-dose implantation and high-temperature annealing. No defects were observed for implantation with doses up to 8 × 1017 O+/cm2, and threading dislocation density has been reduced by three to four orders of magnitude. Continuous and uniform buried layers are formed with about 65{\%} of the dose required by the standard SIMOX process. Results have shown that by these methods low defect, superior quality, SIMOX wafers for submicron CMOS and bipolar device can be produced.",
author = "Fereydoon Namavar and Elisabetta Cortesi and Piran Sioshansi",
year = "1988",
month = "12",
day = "1",
language = "English (US)",
note = "Proceedings of 1988 IEEE SIS/SOI Technology Workshop ; Conference date: 03-10-1988 Through 05-10-1988",

}

TY - CONF

T1 - Low defect, high quality SIMOX material for bipolar device applications.

AU - Namavar, Fereydoon

AU - Cortesi, Elisabetta

AU - Sioshansi, Piran

PY - 1988/12/1

Y1 - 1988/12/1

N2 - The threading dislocation densities of 108/cm2 to 1010/cm2 that are typical of SIMOX material are detrimental for bipolar structures and orders-of-magnitude reduction of defect density is still required to permit SIMOX (separation by implanted oxygen) material to be acceptable for high-performance bipolar and analog devices. Two methods have been developed to produce low-defect SIMOX wafers. In the first method, threading dislocation defects are reduced by low-dose Ge implantation and subsequent solid-phase epitaxial (SPE) regrowth. Ge implantation produces a strained and amorphized layer that during the SPE acts as an artificial interface and deflects or stops the propagation of threading dislocations. In the second method, threading dislocations are prevented by a multiple low-dose implantation and high-temperature annealing. No defects were observed for implantation with doses up to 8 × 1017 O+/cm2, and threading dislocation density has been reduced by three to four orders of magnitude. Continuous and uniform buried layers are formed with about 65% of the dose required by the standard SIMOX process. Results have shown that by these methods low defect, superior quality, SIMOX wafers for submicron CMOS and bipolar device can be produced.

AB - The threading dislocation densities of 108/cm2 to 1010/cm2 that are typical of SIMOX material are detrimental for bipolar structures and orders-of-magnitude reduction of defect density is still required to permit SIMOX (separation by implanted oxygen) material to be acceptable for high-performance bipolar and analog devices. Two methods have been developed to produce low-defect SIMOX wafers. In the first method, threading dislocation defects are reduced by low-dose Ge implantation and subsequent solid-phase epitaxial (SPE) regrowth. Ge implantation produces a strained and amorphized layer that during the SPE acts as an artificial interface and deflects or stops the propagation of threading dislocations. In the second method, threading dislocations are prevented by a multiple low-dose implantation and high-temperature annealing. No defects were observed for implantation with doses up to 8 × 1017 O+/cm2, and threading dislocation density has been reduced by three to four orders of magnitude. Continuous and uniform buried layers are formed with about 65% of the dose required by the standard SIMOX process. Results have shown that by these methods low defect, superior quality, SIMOX wafers for submicron CMOS and bipolar device can be produced.

UR - http://www.scopus.com/inward/record.url?scp=0024170187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024170187&partnerID=8YFLogxK

M3 - Paper

ER -