Loss measurements for β-SiC-on insulator waveguides for high-speed silicon-based photonic devices

Adrian Vonsovici, Graham T. Reed, Alan G.R. Evans, F. Namavar

Research output: Contribution to journalConference article

7 Scopus citations


In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55μm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

Original languageEnglish (US)
Pages (from-to)115-124
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Jan 1 1999
EventProceedings of the 1999 Silicon-based Optoelectronics - San Jose, CA, USA
Duration: Jan 27 1999Jan 28 1999


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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