Long-wavelength interface modes in semiconductor layer structures

M. Schubert, T. Hofmann, Jan Šik

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We address and explain the occurrence of bulk and interface modes in zinc-blende group-III-group-V semiconductor layer structures observed by spectroscopic ellipsometry at infrared wavelengths. Fano- and Brewster-type transverse-magnetic (p-polarized) interface modes as well as transverse-electric (s-polarized) surface-guided interface modes are assigned by solutions of the surface polariton dispersion relations for polar semiconductor layer structures. We show that the Berreman-effect [D. W. Berreman, Phys. Rev. 130, 2193 (1963)] is associated with the occurrence of a Fano-interface polariton. Experimental verification is demonstrated for a GaAs homostructure, which consists of differently Te-doped n-type substrates covered by undoped epilayers.

Original languageEnglish (US)
Article number035324
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number3
DOIs
StatePublished - Jan 1 2005

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Semiconductor materials
Wavelength
Spectroscopic ellipsometry
Epilayers
wavelengths
polaritons
Zinc
occurrences
Infrared radiation
Substrates
ellipsometry
zinc
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Long-wavelength interface modes in semiconductor layer structures. / Schubert, M.; Hofmann, T.; Šik, Jan.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 3, 035324, 01.01.2005.

Research output: Contribution to journalArticle

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