Lithographic graphitic memories

Alexander Sinitskii, James M. Tour

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Reported here are easily accessible memory devices based upon stripes of chemical vapor deposited (CVD) nanosized irregular discs of graphitic material that can be layered in stripes ≤10 nm thick with controllable lengths and widths. These lithographic graphitic stripes, which can be easily fabricated in large quantities in parallel by conventional fabrication techniques (such as CVD and photo-or e-beam lithography), with yields ≥95%, are shown to exhibit voltage-induced switching behavior, which can be used for two-terminal memories. These memories are stable, rewritable, and nonvolatile with ON/OFF ratios up to 107, switching times down to 1 μs (tested limit), and switching voltages down to 3-4 V. The major functional parameters of these lithographic memories are shown to be scalable with the devices' dimensions.

Original languageEnglish (US)
Pages (from-to)2760-2766
Number of pages7
JournalACS Nano
Volume3
Issue number9
DOIs
StatePublished - Sep 22 2009

Fingerprint

Data storage equipment
Vapors
vapors
Computer terminals
Electric potential
electric potential
Lithography
lithography
Fabrication
fabrication

Keywords

  • CVD
  • Graphene
  • Graphitic carbon
  • Nanoscale devices
  • Nonvolatile memories
  • Resistive switching

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lithographic graphitic memories. / Sinitskii, Alexander; Tour, James M.

In: ACS Nano, Vol. 3, No. 9, 22.09.2009, p. 2760-2766.

Research output: Contribution to journalArticle

Sinitskii, Alexander ; Tour, James M. / Lithographic graphitic memories. In: ACS Nano. 2009 ; Vol. 3, No. 9. pp. 2760-2766.
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