Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy

V. Darakchieva, B. Monemar, A. Usui, M. Saenger, M. Schubert

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The lattice parameters of low-defect density undoped bulk GaN fabricated by halide vapor phase epitaxy (HVPE) and removal of the substrate are precisely determined using high-resolution X-ray diffraction. The obtained values, c = 5.18523 over(A, ̊) and a = 3.18926 over(A, ̊) are compared with the lattice parameters of free-standing HVPE-GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high pressure technique and homoepitaxial GaN layer is made, and the observed differences are discussed in terms of their free-electron concentrations, point and structural defects.

Original languageEnglish (US)
Pages (from-to)959-965
Number of pages7
JournalJournal of Crystal Growth
Volume310
Issue number5
DOIs
StatePublished - Mar 1 2008

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Keywords

  • A1. GaN bulk
  • A1. High-resolution x-ray diffraction
  • A1. Lattice parameters
  • A1. Point and extended defects
  • B3. Hydride/Halide vapor phase epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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