Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip

Y. F. Lu, Z. H. Mai, G. Qiu, W. K. Chim

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip in air has been investigated. A 532 nm Nd:YAG pulsed laser with a pulse duration of 7 ns was used. A 2 × 2 oxide dot array with dot sizes between 20 and 30 nm and an oxide single line with a width less than 30 nm have been created using an electrochemical-etched tungsten tip under laser irradiation. The modified regions were characterized by atomic force microscope. The apparent depth of oxide layer as a function of laser intensity has been studied. The advantages and drawbacks of using a continuous wave laser and a pulsed laser will be discussed.

Original languageEnglish (US)
Pages (from-to)2359-2361
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number16
DOIs
StatePublished - Oct 18 1999

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microscopes
oxidation
scanning
oxides
pulsed lasers
hydrogen
lasers
continuous wave lasers
YAG lasers
tungsten
pulse duration
irradiation
air

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip. / Lu, Y. F.; Mai, Z. H.; Qiu, G.; Chim, W. K.

In: Applied Physics Letters, Vol. 75, No. 16, 18.10.1999, p. 2359-2361.

Research output: Contribution to journalArticle

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