Laser-induced dry lift-off process

Yong Feng Lu, Yoshinobu Aoyag

Research output: Contribution to journalArticle

Abstract

A dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form SÍO2 patterns on GaAs substrate. SÍO2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.

Original languageEnglish (US)
Pages (from-to)L1669-L1670
JournalJapanese Journal of Applied Physics
Volume34
Issue number12
DOIs
StatePublished - Dec 1995

Fingerprint

Excimer lasers
Laser beam effects
Pulsed lasers
photodecomposition
Lasers
Substrates
Air
excimer lasers
lasers
pulsed lasers
irradiation
air

Keywords

  • Dry process
  • Laser lift-off
  • Photoresist
  • UV pulse laser

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Laser-induced dry lift-off process. / Lu, Yong Feng; Aoyag, Yoshinobu.

In: Japanese Journal of Applied Physics, Vol. 34, No. 12, 12.1995, p. L1669-L1670.

Research output: Contribution to journalArticle

Lu, Yong Feng ; Aoyag, Yoshinobu. / Laser-induced dry lift-off process. In: Japanese Journal of Applied Physics. 1995 ; Vol. 34, No. 12. pp. L1669-L1670.
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