Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere

Y. F. Lu, M. Takai, S. Nagamoto, S. Namba

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl4 gas atmosphere and even higher than that in a H3PO4 solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained.

Original languageEnglish (US)
Pages (from-to)39-45
Number of pages7
JournalApplied Physics B Photophysics and Laser Chemistry
Volume53
Issue number1
DOIs
StatePublished - Jul 1 1991

Fingerprint

Ferrite
ferrites
Etching
etching
atmospheres
Lasers
lasers
aspect ratio
Aspect ratio
grooves
Irradiation
irradiation
Ions
Gases
gases
ions

Keywords

  • 75.50G
  • 81.60

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere. / Lu, Y. F.; Takai, M.; Nagamoto, S.; Namba, S.

In: Applied Physics B Photophysics and Laser Chemistry, Vol. 53, No. 1, 01.07.1991, p. 39-45.

Research output: Contribution to journalArticle

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