Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere

Y. F. Lu, M. Takai, S. Nagamoto, S. Namba

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl4 gas atmosphere and even higher than that in a H3PO4 solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained.

Original languageEnglish (US)
Pages (from-to)39-45
Number of pages7
JournalApplied Physics B Photophysics and Laser Chemistry
Volume53
Issue number1
DOIs
Publication statusPublished - Jul 1 1991

    Fingerprint

Keywords

  • 75.50G
  • 81.60

ASJC Scopus subject areas

  • Engineering(all)

Cite this