Laser-controlled etching of (Al,Ga)As epitaxial layers

T. C. Chong, Yongfeng Lu, A. Lee

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We report a systematic study of laser-controlled etching behaviors of AlxGa1-xAs epitaxial layers (x from 0 to 0.5) by varying parameters such as laser power, beam scanning speed, beam duty cycle, number of scans and different doping types and concentrations. The laser source was an argon ion laser emitting at 514.5 nm and the etchant used was aqueous KOH (0.25 M). Etch rates of n-type layers were found to be significantly higher than those for p-type layers. Generally, higher etch rates were observed for layers with higher aluminium mole fraction. The etch rate was found to increase at an exponential rate with the laser power for CW beam, but this increase became linear when a chopped laser beam was used. The dependence of etch rates on different conditions can be largely accounted for by the differences in the built-in electric field at the surface as well as differences in the laser-induced local temperature rise in the layers.

Original languageEnglish (US)
Pages (from-to)491-496
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume397
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Fingerprint

Epitaxial layers
Etching
etching
Lasers
lasers
etchants
Argon
Aluminum
Laser beams
Light sources
Electric fields
Doping (additives)
argon
laser beams
Ions
aluminum
Scanning
cycles
scanning
electric fields

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Laser-controlled etching of (Al,Ga)As epitaxial layers. / Chong, T. C.; Lu, Yongfeng; Lee, A.

In: Materials Research Society Symposium - Proceedings, Vol. 397, 01.01.1996, p. 491-496.

Research output: Contribution to journalConference article

@article{82e59a49b1ff40968bf38eb81b8986b8,
title = "Laser-controlled etching of (Al,Ga)As epitaxial layers",
abstract = "We report a systematic study of laser-controlled etching behaviors of AlxGa1-xAs epitaxial layers (x from 0 to 0.5) by varying parameters such as laser power, beam scanning speed, beam duty cycle, number of scans and different doping types and concentrations. The laser source was an argon ion laser emitting at 514.5 nm and the etchant used was aqueous KOH (0.25 M). Etch rates of n-type layers were found to be significantly higher than those for p-type layers. Generally, higher etch rates were observed for layers with higher aluminium mole fraction. The etch rate was found to increase at an exponential rate with the laser power for CW beam, but this increase became linear when a chopped laser beam was used. The dependence of etch rates on different conditions can be largely accounted for by the differences in the built-in electric field at the surface as well as differences in the laser-induced local temperature rise in the layers.",
author = "Chong, {T. C.} and Yongfeng Lu and A. Lee",
year = "1996",
month = "1",
day = "1",
language = "English (US)",
volume = "397",
pages = "491--496",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Laser-controlled etching of (Al,Ga)As epitaxial layers

AU - Chong, T. C.

AU - Lu, Yongfeng

AU - Lee, A.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We report a systematic study of laser-controlled etching behaviors of AlxGa1-xAs epitaxial layers (x from 0 to 0.5) by varying parameters such as laser power, beam scanning speed, beam duty cycle, number of scans and different doping types and concentrations. The laser source was an argon ion laser emitting at 514.5 nm and the etchant used was aqueous KOH (0.25 M). Etch rates of n-type layers were found to be significantly higher than those for p-type layers. Generally, higher etch rates were observed for layers with higher aluminium mole fraction. The etch rate was found to increase at an exponential rate with the laser power for CW beam, but this increase became linear when a chopped laser beam was used. The dependence of etch rates on different conditions can be largely accounted for by the differences in the built-in electric field at the surface as well as differences in the laser-induced local temperature rise in the layers.

AB - We report a systematic study of laser-controlled etching behaviors of AlxGa1-xAs epitaxial layers (x from 0 to 0.5) by varying parameters such as laser power, beam scanning speed, beam duty cycle, number of scans and different doping types and concentrations. The laser source was an argon ion laser emitting at 514.5 nm and the etchant used was aqueous KOH (0.25 M). Etch rates of n-type layers were found to be significantly higher than those for p-type layers. Generally, higher etch rates were observed for layers with higher aluminium mole fraction. The etch rate was found to increase at an exponential rate with the laser power for CW beam, but this increase became linear when a chopped laser beam was used. The dependence of etch rates on different conditions can be largely accounted for by the differences in the built-in electric field at the surface as well as differences in the laser-induced local temperature rise in the layers.

UR - http://www.scopus.com/inward/record.url?scp=0029726884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029726884&partnerID=8YFLogxK

M3 - Conference article

VL - 397

SP - 491

EP - 496

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -